Littelfuse unveils SiC schottky diodes at PCIM
Circuit protection company Littelfuse will introduce the latest addition to its range of power semiconductors, the LFUSCD series of SiC Schottky Diodes, at the PCIM Europe 2016 exhibition, May 10-12, 2016, Nuremberg, Germany.
When compared to standard silicon bipolar power diodes, LFUSCD Series SiC Schottky diodes allow designers to reduce switching losses, accommodate large surge currents without thermal runaway, and operate at higher junction temperatures (up to 175degC), all of which enable substantial increases in system efficiency and robustness.
The merged p-n Schottky (MPS) device architecture of the LFUSCD Series ensures enhanced surge capability and reduced leakage current, according to the company. Available in voltage ratings of 650V and 1200V at current ratings ranging from 4A to 30A, they are well-suited for a broad range of markets, including industrial power supplies, solar inverters, industrial drives, welding and plasma cutting, and EV/HEV charging stations.
"As part of our growing power semiconductor portfolio, we are excited to announce our line of SiC Schottky diodes," said Kevin Speer, business development manager for the Power Semiconductor technology line.
"With best-in-class forward voltage drop and stored capacitive charge, Littelfuse SiC diodes will enable our customers to optimize the efficiency of their designs while increasing system robustness and reliability."
