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Wednesday 10th December 2008
Intel is claiming another first for silicon photonics, with an avalanche photodiode that outperforms equivalent devices.
Monday 8th December 2008
Removing the sapphire substrate, changing contact layout and using niobium oxide reflectors enables room temperature operation.
Monday 8th December 2008
Power amplifier makers had been hoping for seasonally typical cellphone sales, but this now appears over-optimistic.
Friday 5th December 2008
Oxford Instruments sees significant etch system deployments through 2009, a shift to 6-inch substrates, and the initial deliveries of its hydride VPE deposition equipment.
Thursday 4th December 2008
The French firm is taking on JDSU and Bookham with its 980 nm GaAs-based terrestrial pumps, and is confident they will contribute to 20 percent revenue growth in 2009.
Wednesday 3rd December 2008
The chip maker says that blue-emitting GaN die can be converted to broad wavelength white emitters by material deposited in etched trenches.
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Tuesday 2nd December 2008
As semiconductor industry forecasters talk of a "bloody" 2009 before the start of a recovery phase, the outlook for the GaAs niche remains solid.
Monday 1st December 2008
Two US companies are helping their customers tackle the tricky issue of programming transceivers in the "self-healing" 802.15.4 networks.
Thursday 27th November 2008
Temperature-controlled heat sink makes LED tests compatible with existing methods used in conventional lighting, claims Gaithersburg group.
Wednesday 26th November 2008
DisplaySearch report reveals sudden 63 per cent jump in sales of notebooks featuring LED backlights, with market penetration of the new technology set to double in the coming quarter.
Tuesday 25th November 2008
Updated report from ElectroniCast suggests that the high-brightness LED segment is largely immune to the wider economic downturn.
Friday 21st November 2008
RF component and LED makers have helped stem the semiconductor processing equipment manufacturer’s losses, and are a key part of its ongoing strategy.
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Friday 21st November 2008
After a disappointing debut in Korea, WiMAX technology faces a crucial twelve months as the major deployment by New Clearwire gathers speed in the US.
Thursday 20th November 2008
A high-power GaAs laser diode that emits light with a very narrow vertical divergence offers unique advantages for beam shaping and coupling.
Thursday 20th November 2008
Narrowing the barrier layers between quantum wells improves carrier transport and delays the fall-off in efficiency of solid state light emission known as "droop".
Tuesday 18th November 2008
After the CPV system maker optimizes its optics, upcoming improvements in III-V solar cells look set to push performance even further.
Monday 17th November 2008
Technology acquired in Peak Devices deal delivers high-efficiency RF power across an unprecedented bandwidth.
Monday 17th November 2008
The Californian optoelectronic component manufacturer is asserting its monolithic InP integration patents against other chipmakers and even its own customers.
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Friday 14th November 2008
The company has entered production with a cellphone radio module that saves on material.
Friday 14th November 2008
Negative outlook for 2009 sees RFMD, Skyworks and TriQuint hammered on the Nasdaq stock exchange.
Wednesday 12th November 2008
Researchers working on lattice-matched III-V solar cells at Madrid's Polytechnic University set a new world-best efficiency mark of 32.6 per cent at over 1000-sun concentration.
Wednesday 12th November 2008
High temperature operation lasers have brought 20 Gbit/s optical chip-to-chip data transfer closer, with similar technology being used elsewhere in co-operation with Intel.
Tuesday 11th November 2008
The Japanese electronics firm shows what can be done with its normally-off transistors, made on 5-inch diameter GaN-on-silicon epiwafers.
Monday 10th November 2008
Spanning from the C-band to the X-band with its HEMT technology, Fujitsu’s latest efficient PA is set to benefit broadband wireless and radar.

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