AIXTRON AG today announced that its next generation MOCVD Platform AIX G5 HT has demonstrated high quality GaN deposition at very high growth rates and high pressure above 600mbar and superior GaN/InGaN uniformities.
We have investigated an edge-emitting tilted wave laser (TWL) with the active region based on GaInAs/GaAs quantum wells. In the TWL the wavelength stabilization is based on the coupling of the laser active waveguide cavity to a specially introduced thick epitaxial layer and the emission wavelength is defined by the combined cavity mode preferably by a single dominating mode.
Hittite Microwave Corporation (NASDAQ:HITT) today reported revenue for the fourth quarter ended December 31, 2009 of $43.7 million, representing a decrease of 5.9% compared with $46.4 million for the fourth quarter of 2008 and an increase of 5.3% compared with $41.5 million for the third quarter of 2009.
GigOptix, Inc. (OTCBB:GGOX), announces that Mr. Anik Bose, an experienced high tech executive and a General Partner at Benhamou Global Ventures, has joined the GigOptix Advisory Board. Mr. Bose has joined the Advisory Board to focus on the strategic growth of GigOptix through M&A and business development in China.
The NAE recognized Thomas Kuech, Milton J. and A. Maude Shoemaker Professor of Chemical and Biological Engineering at UW-Madison, for his contributions in developing and characterizing compound semiconductors.
Keithley Instruments, Inc. today introduced the Model 4225-PMU Ultra Fast I-V Module, the latest addition to the growing range of instrumentation options for the Model 4200-SCS Semiconductor Characterization System