Mitsubishi Electric Corporation (TOKYO:6503) announced today it has developed four models of gallium nitride high-electron mobility transistor (GaN HEMT) for 4.0 GHz band satellite applications, with output ranging from 2W to 100W.
Samsung Electronics Co., the world's largest flat screen TV maker, unveiled Thursday the world's first three-dimensional (3D) full high-definition (HD) televisions using light-emitting diodes (LED), as the company targets to sell 2 million units of 3D TVs worldwide this year, the company said.
AXT, Inc., a leading manufacturer of compound semiconductor substrates, today announced that Morris S. Young, chief executive officer, and Raymond A. Low, chief financial officer, will present at the Jefferies 4th Annual Global Technology Conference at the Mandarin Oriental Hotel in New York City on Monday, March 8th, 2010 at 1:30 pm ET.
Keithley Instruments, Inc. (NYSE:KEI), a world leader in advanced electrical test instruments and systems, today introduced the Model 4225-PMU Ultra-Fast I-V Module, the latest addition to the growing range of instrumentation options for the Model 4200-SCS Semiconductor Characterization System.
International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced the industry’s first family of commercial integrated power stage products utilizing IR’s revolutionary Gallium Nitride (GaN)-based power device technology platform. The iP2010 and iP2011 family of devices is designed for multiphase and point-of-load (POL) applications including servers, routers, switches and general purpose POL DC-DC converters.