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Tuesday 20th January 2009
Son of power semiconductor firm's founder accused of forming an "undercover company" to steal the findings of its $60 million research project.
Tuesday 20th January 2009
Partnership suits both parties as notebook backlights reportedly increase demand for Nichia-branded LED die amid slumping sales elsewhere.
Monday 19th January 2009
The wide-bandgap semiconductor helps extend radio-frequency product testing up to 6 GHz, but GaAs technology still reigns for lower frequencies.
Friday 16th January 2009
Improved trapping of defects in the buffer layers between junctions is the first step in pushing the European group's conversion efficiency beyond 42 percent.
Thursday 15th January 2009
An ambitious European project is expected to result in both a new material deposition system and higher-efficiency solar cells for concentrating photovoltaics.
Wednesday 14th January 2009
A project backed by the European Space Agency is focused on creating an independent supply of GaN-based components for space and non-space applications.
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Tuesday 13th January 2009
Last week's announcement that China will adopt three different broadband wireless protocols presents the major GaAs players with new opportunities.
Tuesday 13th January 2009
The foundry will focus on wireless and solar markets after selling its AlGaInP emitter business to Crystal Light Optotech.
Monday 12th January 2009
Overall girth - rather than merely image size - and efficiency are now key product statistics due to solid-state backlights, at the huge Las Vegas consumer electronics show.
Friday 9th January 2009
Tailoring the polarization fields in a GaN emitter's active region is now possible without using aluminum, offering an 18 percent boost in high-current light output.
Friday 9th January 2009
Reduced capital expenditures and ever-shrinking die sizes will allow the GaAs chip manufacturer to significantly improve its debt position over the coming year.
Thursday 8th January 2009
The solar cell and optical communications component manufacturer outlines the steps it is taking to ensure its ongoing fiscal security.
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Tuesday 6th January 2009
Devices based on 'wonder material' could soon catch up with silicon
Tuesday 6th January 2009
Having gained a patent license from Veeco, the niche equipment maker is confident the two firms will not clash in the marketplace over the technology.
Tuesday 6th January 2009
Continued firm RF orders, plus gaining Philips Lumileds as a customer, keeps the substrate manufacturer positive despite poor sales.
Monday 5th January 2009
Thanks to reduced current crowding, a large-area VJFET made by US researchers operates with low loss and blocks 2055 V.
Monday 22nd December 2008
Military deployments will contribute more than early penetration into 4G wireless infrastructure, says market analyst Strategy Analytics.
Monday 22nd December 2008
Hetero-facet-controlled epitaxial layer overgrowth has extended the emission of Hamamatsu's UV lasers to 336 nm.
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Friday 19th December 2008
MBE-grown monolithic LEDs with optically pumped layers promise a straightforward way to eliminate phosphors.
Thursday 18th December 2008
Intel and QinetiQ unveil an InSb quantum well FET with a record-breaking cut-off frequency, overcoming a major hurdle on the way to all-compound semiconductor CMOS.
Wednesday 17th December 2008
The cellphone PA maker is temporarily reducing output to cut costs in response to the most rapid slowdown that its founder, Jerry Neal, has ever seen.
Tuesday 16th December 2008
At IEDM, the research lab demonstrates that CMOS performance does not have to be compromised by heterogeneous bonding to InP DHBT wafers.
Tuesday 16th December 2008
The Portland, Oregon, based RF semiconductor company will imminently start addressing strong demand for its HV-HBT cellular base station amplifiers.
Monday 15th December 2008
With backers already interested, Aurora UV is looking for an experienced LED industry partner to fund commercialization of its quality HVPE-grown substrates for making UV LEDs.

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