News Article
Marktech launches InGaAs/InP PIN photo diodes
These 800nm to 1750nm range wafers are suited for use in photo detectors, linear arrays and image sensors
Marktech Optoelectronics is introducing its line of PIN photo diode components based on InGaAs/InP technology.
These devices are currently available in a TO-46 flat top package with a spectral sensitivity in the 800nm to 1750nm range.
PIN Photo Diode
Photo Diode chip active area sizes from 0.1mm to 3.0mm are available to provide the optimum balance between low dark current, high speed and light sensitivity.
This allows for increased flexibility and options in a variety of applications ranging from fibre optics and high speed optical communications to medical and chemical analysis.
No integrated thermal electric cooling is utilised on any of the firm's PIN photo diodes, thereby reducing costs and improving overall efficiency.
These devices are available from Digi-Key.
Custom package options and die are also available. In addition to PIN photo diodes, Marktech offers foundry services for epitaxial growth of SWIR wafers in the 1.0 mm to 2.6 mm range, using InP as the base substrate. Marktech is currently producing these wafers in 2”, 3” and 4” diameters.
The firm says among the applications for these wafers are photo detectors, linear arrays and image sensors. Photo detectors processed using its epitaxial wafers are claimed to provide significant advantages, including lower dark current, better shunt resistance and overall improved performance at lower operating temperatures.
Marktech will be exhibiting at Photonics West in San Francisco between February 4th and 6th, 2014. The company representatives will be at booth #5143 and describe its line of PIN photo diode components based on InGaAs/InP technology.
These devices are currently available in a TO-46 flat top package with a spectral sensitivity in the 800nm to 1750nm range.
PIN Photo Diode
Photo Diode chip active area sizes from 0.1mm to 3.0mm are available to provide the optimum balance between low dark current, high speed and light sensitivity.
This allows for increased flexibility and options in a variety of applications ranging from fibre optics and high speed optical communications to medical and chemical analysis.
No integrated thermal electric cooling is utilised on any of the firm's PIN photo diodes, thereby reducing costs and improving overall efficiency.
These devices are available from Digi-Key.
Custom package options and die are also available. In addition to PIN photo diodes, Marktech offers foundry services for epitaxial growth of SWIR wafers in the 1.0 mm to 2.6 mm range, using InP as the base substrate. Marktech is currently producing these wafers in 2”, 3” and 4” diameters.
The firm says among the applications for these wafers are photo detectors, linear arrays and image sensors. Photo detectors processed using its epitaxial wafers are claimed to provide significant advantages, including lower dark current, better shunt resistance and overall improved performance at lower operating temperatures.
Marktech will be exhibiting at Photonics West in San Francisco between February 4th and 6th, 2014. The company representatives will be at booth #5143 and describe its line of PIN photo diode components based on InGaAs/InP technology.
