Info
Info
News search:

< Page of 639 >

News


Wednesday 24th September 2008
Redesigned contacts have added more than 2 percent to Fraunhofer ISE's conversion efficiency, with optimal performance at solar concentrations used in commercial systems.
Tuesday 23rd September 2008
Innovative molecular beam epitaxy and chemical vapor deposition processes are central to the development of graphene transistors in a DARPA project led by HRL Laboratories.
Tuesday 23rd September 2008
The transfer of the MBE business – and particularly the rights to provide after-sales support for installed reactors – looks to suit both tool makers' ongoing strategies.
Monday 22nd September 2008
The semiconductor giant reveals its release schedule for high-volume production of GaN-based power management devices.
Monday 22nd September 2008
A government-backed LED project produces crack-free GaN-on-silicon epiwafers with an internal quantum efficiency of 40 percent.
Monday 22nd September 2008
A positive analyst report and prizes for its fixtures validate the LED maker’s focus on general illumination and move away from display backlighting.
Info
Thursday 18th September 2008
Sales of DVD recorders and players featuring GaN-based blue lasers are set to more than double in 2008, and may reach 12 million in 2009, says a new report from In-Stat.
Wednesday 17th September 2008
Having near-doubled sales in the past year, the Paris-based manufacturer of optoelectronic components for fiber-optics expects to grow by another 20% in 2009.
Tuesday 16th September 2008
Substrate maker Rubicon Technology says the consumer electronics conglomerate exemplifies the trend to larger diameters that will make up for the weakness it is feeling in the 2-inch market.
Monday 15th September 2008
With the potential to immediately impact III-V solar thanks to germanium crystal grower Sylarus Technologies, the University of Utah approach could also apply to other non-silicon semiconductors.
Monday 15th September 2008
US researchers are combating high-current LED efficiency loss with magnesium-doped InGaN barriers in the active region.
Friday 12th September 2008
The chipmaker is using separate device technologies to help improve efficiency in electric-powered cars for each of its compatriots.
Info
Friday 12th September 2008
Metrology institute PTB has seen a big leap in the quality of crystals it is using to study current, thanks to an MBE reactor from Riber.
Tuesday 9th September 2008
Now with Optium under its wing, the photonic component and fiber-optic subsystem maker sees record sales and anticipates a strong end to the year as product qualifications bear fruit.
Tuesday 9th September 2008
The US-based process equipment vendor says that its plasma-enhanced CVD system has displaced that of an incumbent rival's at a key manufacturer of high-brightness LEDs.
Friday 5th September 2008
Taiwanese LED makers see sales jump 16% thanks to the Beijing Olympics and the Taiwan government's three-year plan for traffic lights, while Win Semiconductors is now ranked among the world's top ten GaAs suppliers.
Friday 5th September 2008
"Helios" project led by CEA-Leti will focus on III-V/silicon integration for future photonics applications; related silicon photonics foundry steps up service offering.
Thursday 4th September 2008
System-on-chip electronics for low-cost cellphones are providing an extra push to the GaAs chipmaker’s sales, and boosting its confident outlook.
Info
Thursday 4th September 2008
Collaborations in areas as diverse as solar power, optical positioning and power electronics have won investment from the UK's Technology Strategy Board.
Wednesday 3rd September 2008
Low-temperature growth of n-ZnO above the active layer is the latest approach to improve the performance of green LEDs and fill the “green gap”.
Tuesday 2nd September 2008
Although 3G is driving strong growth, the epiwafer supplier is trying to improve sales into other compound semiconductor markets to reduce its dependence on wireless.
Monday 1st September 2008
Harvard resarchers have increased the complexity of nanowire structures, producing light between 365 and 494 nm.
Monday 1st September 2008
Leaked details suggest the Windows firm has switched a red diode laser source for a blue LED in the latest attempt to improve the usefulness of our dependable computer controllers.
Friday 29th August 2008
Hexagonal peaks of SiC can provide 100 mm freestanding AlN wafers with low defect densities.

Your First Name
Your Email Address
Next »Close
 
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: