News Article
Soitec and SunEdison to work together
The firms have signed an agreement which ends all outstanding legal disputes between the companies. Each company will have access to the other’s patent portfolio for SOI technologies. Research and development relating to products using SiGe, germanium or III-V materials for the fabrication of high-mobility channels for advanced generation digital applications will also be undertaken together
Soitec and SunEdison have entered into a patent cross-license agreement relating to silicon-on-insulator (SOI) wafer products.
This agreement provides access to a portfolio of patents from both companies and covers the manufacturing of existing engineered unpatterned handle-substrates such as partially depleted SOI, fully depleted SOI and radio-frequency SOI as well as advanced FinFETs.
In addition to the current technologies covered by the agreement, Soitec and SunEdison have agreed to grant each other the right to use their respective wholly owned patents for research and development purposes.
This will allow the companies to develop products in which the device layer is made of a semiconductor material other than plain, non-strained silicon, such as a silicon-germanium compound, germanium or III-V materials. These advanced semiconductor materials enable the fabrication of high-mobility channels for advanced generation digital applications.
The companies have not disclosed additional conditions of the agreement.
This agreement provides access to a portfolio of patents from both companies and covers the manufacturing of existing engineered unpatterned handle-substrates such as partially depleted SOI, fully depleted SOI and radio-frequency SOI as well as advanced FinFETs.
In addition to the current technologies covered by the agreement, Soitec and SunEdison have agreed to grant each other the right to use their respective wholly owned patents for research and development purposes.
This will allow the companies to develop products in which the device layer is made of a semiconductor material other than plain, non-strained silicon, such as a silicon-germanium compound, germanium or III-V materials. These advanced semiconductor materials enable the fabrication of high-mobility channels for advanced generation digital applications.
The companies have not disclosed additional conditions of the agreement.
