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Wednesday 9th July 2008
The 324 GHz single stage InP amplifier is an important landmark for SWIFT, the DARPA program hoping to develop advanced imaging systems.
Tuesday 8th July 2008
Lux Research says that when solar power costs reach grid parity, compound semiconductor systems will near 2 percent of the $70 billion overall market.
Monday 7th July 2008
Deeply entrenched silica lattices hold the key to producing photonic crystal LEDs that maintain electrical performance while improving light extraction, say South Korean scientists.
Friday 4th July 2008
If MOCVD process engineers want greater control over their vapor concentrations then they should consider our upgraded VaporStation, says Rohm and Haas.
Thursday 3rd July 2008
The 12-contact Unity probe combines RF signal, logic, power and ground in-line engineering tests for frequencies up to 20 GHz, and will soon scale to 24-contacts and 80 GHz.
Monday 30th June 2008
Device used excitons to switch beams of light
Friday 27th June 2008
The Belgian materials giant adds credence to the emerging market for terrestrial concentrator photovoltaics based on III-V materials, with a multi-million euro investment in a new germanium wafer facility in Oklahoma.
Friday 27th June 2008
Researchers in Korea believe that their tiny green laser ticks all the boxes for mobile projection applications.
Thursday 26th June 2008
Producing GaN HEMTs on its existing GaAs manufacturing lines means that the RF chipmaker will be shipping them in its latest cable TV modules this year.
Tuesday 24th June 2008
A superluminescent LED has for the first time been engineered to exhibit high output power as well as a broadband emission spectrum.
Tuesday 24th June 2008
The 2008 MTT-S International Microwave Symposium in Atlanta unveils thriving competition between who has the best GaN devices, and who has the best gadgets at their booth.
Friday 20th June 2008
Two of the biggest III-V companies are responding to the needs of the defense industry to push the power and frequency of RF transistors - and look set to move to GaN production on 4-inch wafers in doing so.
Friday 20th June 2008
The latest 0.18 micron SiGe foundry capability offers improved integration and efficiency as the company looks forward to its future under Tower Semiconductor's ownership.
Thursday 19th June 2008
The latest GaAs chips for wireless infrastructure from the European foundry use its PHEMT process to combine high linearity and low noise figures.
Wednesday 18th June 2008
The Japanese company hopes high-power devices, such as the market-leading HEMT that it's bringing into production, will enable it to succeed in a tight RF GaN market.
Tuesday 17th June 2008
It's good news and bad news for the photonic integrated circuit manufacturer, as it scores a major deal with Deutsche Telekom, but lowers sales guidance for the back end of 2008.
Tuesday 17th June 2008
Semiconductor equipment vendor Tegal Corporation says that its strong finances put it in a position to take advantage of weakened competitors who are feeling the strain.
Monday 16th June 2008
As Cree launches a GaN MMIC foundry service, Yole Developpement predicts that this week's MTT-S show will see the release of new wide-bandgap devices and deployment by systems integrators.
Friday 13th June 2008
Despite recovering well from a weak start to its fiscal year, the fiber-optic component maker disappoints some with its 2009 guidance.
Thursday 12th June 2008
Perfect annealing conditions hold the key to fabricating room-temperature single-mode GaInNAs lasers operating at 1.5 microns.
Monday 9th June 2008
Better control of crystal quality is "strictly necessary" to improve blue laser diode reliability, finds an extensive study by laser manufacturer Panasonic and a team at the University of Padova.
Friday 6th June 2008
The GaAs chip manufacturer's share price is booming, thanks in part to its recent acquisition of Freescale's power amplifier business.
Friday 6th June 2008
Best-ever system efficiency figures bode well for Concentrix Solar’s larger upcoming solar power plant deployments and factory opening.
Thursday 5th June 2008
Using a closely lattice-matched buffer, Chinese researchers have demonstrated HVPE growth of non-polar GaN epilayers on economical substrates.

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