Toshiba extends family Of 650V SiC power devices
With analysts predicting significant growth in the SiC power device market, Toshiba is expanding its SBD line-up to meet an anticipated spike in demand
6, 8 and 10A Devices Added to Silicon Carbide Schottky Barrier Diode Range
Toshiba America Electronic Components, Inc has announced that it has extended its family of 650V silicon carbide (SiC) Schottky Barrier Diodes (SBD). The TRS6E65C, TRS8E65C and TRS10E65C are 6, 8, and 10A devices, respectively. These SBDs join Toshiba's 12A device, the TRS12E65C, which entered volume production in 2Q 2013. With analysts predicting significant growth in the SiC power device market, Toshiba is expanding its SBD line-up to meet an anticipated spike in demand.
Low forward voltage drop and a very fast switching action make SBDs well-suited to applications including power conditioners for photovoltaic power generation systems, solar inverters, uninterruptible power supplies and DC-DC converters. SBDs can also act as replacements for silicon diodes in switching power supplies, where they are much more efficient.
SiC power devices offer more stable operation than current silicon devices - even at high voltages and currents - as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and suit industrial applications ranging from servers to inverters and trains to automotive systems.
The Toshiba SBD range features a maximum reverse recovery current (IRRM) of 90 microamperes @ 650V. All devices are housed in TO-220 packages, with additional packages scheduled to be added at a future date.