The "city of sin" saw leading chip makers go on the offensive with claims of class-leading devices, and GaN-substrate developers championing breakthroughs in large-diameter free-standing material. Richard Stevenson reports from the 7th International Conference on Nitride Semiconductors.
MBE pioneer Klaus Ploog opened the 7th International Conference on Nitride Semiconductors by telling delegates that despite some great success in LEDs, improvements to native nitride substrates are just one of many more developments needed.
Cree and Nichia reach a new, customer-protecting, patent agreement; meanwhile Nichia issues a patent suit against Seoul Semiconductor on its home turf; Aixtron receives an order from a Chinese university; and LG puts Anadigics' PA in its new Chocolate phone.
Big Blue is teaming with leading RF companies on silicon CMOS for cellphone and WLAN front ends, and says that ambitious PA makers will determine when the technology will pose serious competition to GaAs.
Cree researchers squeeze more than 1000 lm from a single-die LED; Finisar predicts drop-off in VCSEL business amidst "turbulence"; Bookham qualifies submarine laser production; and TDI enters production with 4-inch GaN and AlN epiwafers.