News Article
IQE reveals industry's first 150mm InSb substrates
The indium antimonide substrates are suited for use in MWIR focal plane infrared detectors
IQE is, this week, presenting a series of invited papers on recent key developments in advanced photonic technologies at optoelectronics event, Photonics West.
One of the papers announces what IQE says is an industry first; the commercial growth and characterisation of 6” diameter InSb substrates that are suitable for use in the fabrication of MWIR focal plane infrared detectors.
Mid-wavelength infrared (MWIR), also called intermediate infrared (IIR) devices, are in the 3 to 8 µm range.
Growth and characterisation of 6" InSb substrates for use in large area infrared imaging applications
In addition to the 150mm InSb announcement, IQE will establish a strong presence at Photonics West with the presentation of a further two invited papers by the Group’s infrared division:
GaSb-based photodetectors covering short-wave to long-wave IR grown by MBE
Molecular beam epitaxial (MBE) growth of GaSb-based photodetector structures spanning the short-wave to long wave IR spectral range. Barrier-type nBn detectors, grown on 4-inch GaSb or 6-inch GaAs.
Multi-wafer growth of GaInAs photodetectors on 4" InP by MOCVD for SWIR imaging applications
Growth of InP/GaInAs photodetectors on 4” InP by MOCVD.
Photonics West runs from 3rd to 6th February at the Moscone Convention Centre in San Francisco and is expected to attract around 1,200 exhibitors and 19,000 visitors.
One of the papers announces what IQE says is an industry first; the commercial growth and characterisation of 6” diameter InSb substrates that are suitable for use in the fabrication of MWIR focal plane infrared detectors.
Mid-wavelength infrared (MWIR), also called intermediate infrared (IIR) devices, are in the 3 to 8 µm range.
Growth and characterisation of 6" InSb substrates for use in large area infrared imaging applications
In addition to the 150mm InSb announcement, IQE will establish a strong presence at Photonics West with the presentation of a further two invited papers by the Group’s infrared division:
GaSb-based photodetectors covering short-wave to long-wave IR grown by MBE
Molecular beam epitaxial (MBE) growth of GaSb-based photodetector structures spanning the short-wave to long wave IR spectral range. Barrier-type nBn detectors, grown on 4-inch GaSb or 6-inch GaAs.
Multi-wafer growth of GaInAs photodetectors on 4" InP by MOCVD for SWIR imaging applications
Growth of InP/GaInAs photodetectors on 4” InP by MOCVD.
Photonics West runs from 3rd to 6th February at the Moscone Convention Centre in San Francisco and is expected to attract around 1,200 exhibitors and 19,000 visitors.
