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Monday 15th September 2008
US researchers are combating high-current LED efficiency loss with magnesium-doped InGaN barriers in the active region.
Friday 12th September 2008
The chipmaker is using separate device technologies to help improve efficiency in electric-powered cars for each of its compatriots.
Friday 12th September 2008
Metrology institute PTB has seen a big leap in the quality of crystals it is using to study current, thanks to an MBE reactor from Riber.
Tuesday 9th September 2008
Now with Optium under its wing, the photonic component and fiber-optic subsystem maker sees record sales and anticipates a strong end to the year as product qualifications bear fruit.
Tuesday 9th September 2008
The US-based process equipment vendor says that its plasma-enhanced CVD system has displaced that of an incumbent rival's at a key manufacturer of high-brightness LEDs.
Friday 5th September 2008
Taiwanese LED makers see sales jump 16% thanks to the Beijing Olympics and the Taiwan government's three-year plan for traffic lights, while Win Semiconductors is now ranked among the world's top ten GaAs suppliers.
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Friday 5th September 2008
"Helios" project led by CEA-Leti will focus on III-V/silicon integration for future photonics applications; related silicon photonics foundry steps up service offering.
Thursday 4th September 2008
System-on-chip electronics for low-cost cellphones are providing an extra push to the GaAs chipmaker’s sales, and boosting its confident outlook.
Thursday 4th September 2008
Collaborations in areas as diverse as solar power, optical positioning and power electronics have won investment from the UK's Technology Strategy Board.
Wednesday 3rd September 2008
Low-temperature growth of n-ZnO above the active layer is the latest approach to improve the performance of green LEDs and fill the “green gap”.
Tuesday 2nd September 2008
Although 3G is driving strong growth, the epiwafer supplier is trying to improve sales into other compound semiconductor markets to reduce its dependence on wireless.
Monday 1st September 2008
Harvard resarchers have increased the complexity of nanowire structures, producing light between 365 and 494 nm.
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Monday 1st September 2008
Leaked details suggest the Windows firm has switched a red diode laser source for a blue LED in the latest attempt to improve the usefulness of our dependable computer controllers.
Friday 29th August 2008
Hexagonal peaks of SiC can provide 100 mm freestanding AlN wafers with low defect densities.
Thursday 28th August 2008
The company arising from the 2005 private equity buyout of the Agilent's semiconductor products group is returning to public listing to pay off some of its debts.
Wednesday 27th August 2008
Carbon monoxide can now be detected by vertical-cavity surface-emitting lasers, thanks to a design that pushes emission out to 2.3 microns.
Tuesday 26th August 2008
German maker of concentrator systems featuring III-V components believes that many new cell companies are about to enter the market.
Tuesday 26th August 2008
ADS, the modeling package used by GaAs manufacturers worldwide, now also simulates electromagnetic interactions in three dimensions, helping to avoid packaging issues than can scupper well-designed RFICs.
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Friday 22nd August 2008
Wireless chip makers targeting the in-home cellphone booster boxes will have to support a mixture of radio interfaces, from GSM to WiMAX, and wait until 2010 for major deployments.
Thursday 21st August 2008
Swedish company Obducat, which specializes in nano-imprint lithography equipment, is set to ship at least two tools to Luxtaltek, a new Taiwanese maker of photonic crystal LEDs.
Thursday 21st August 2008
The laser chip and module manufacturer is seeing increased bandwidth demand driving strong growth, but must also work to improve on limited profitability in the sector.
Tuesday 19th August 2008
Emitting at 1543 and 1571 nm simultaneously, the InAs-on-InP device looks like the first dual-wavelength self-modelocked source.
Monday 18th August 2008
The popularity of the company's GaAs BiFETs for 3G handsets has been a mixed blessing, with its 10-year veteran CEO departing as it counts the cost of failing to meet demand in 2007.
Friday 15th August 2008
Because they use GaAs instead of germanium substrates, NREL scientists can readily exploit the ideal combination of materials to produce a compound semiconductor cell.

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