EPC expands eGaN FET portfolio with 150 V power transistor
The new gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion and Class D Audio applications
Efficient Power Conversion Corporation (EPC) is introducing the EPC2018 as the newest member of its family of enhancement mode gallium nitride power transistors.
The EPC2018 is a 5.76 mm2, 150 VDS, 12 A device with a maximum RDS(on) of 25 milliohms with 5V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a very small package.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2018 is much smaller and has many times superior switching performance.
Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, as well as many other circuits needing nanosecond switching speeds.
“The EPC2018 is an excellent complement to our existing family of eGaN FETs. The low on resistance, low output capacitance, fast switching, and no reverse recovery reduce the switching losses in power conversion applications and allow for higher efficiency and improved sound quality in Class D audio applications,” notes Alex Lidow, co-founder and CEO.
In 1k piece quantities, the EPC2018 is priced at $6.54 and is immediately available through Digi-Key Corporation
Summary of EPC2018 Specification Ratings