MACOM unveils 600 W GaN-on-SiC power transistor for avionics
The internally-matched gallium nitride-on-silicon carbide pulsed device provides high gain, efficiency and ruggedness over the 1030 to 1090 MHz bandwidth
M/A-COM Technology Solutions (MACOM), a supplier of high-performance RF, microwave and millimetre wave products, has announced a new ceramic GaN-on-SiC HEMT power transistor for avionics applications.
The MAGX-001090-600L00 is a gold-metalised, matched GaN-on, RF power transistor optimised for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems.
The MAGX-001090-600L00 provides 600 W of output power with a typical 21.4 dB of gain and 63 percent efficiency. The device has very low thermal resistance of 0.05 °C/W and best-in-class load mismatch tolerance of 5:1. What's more, the device has the lowest pulse droop of 0.2 dB and also can be used effectively under more demanding Mode-S ELM operating conditions.
MACOM's GaN transistor technology has been fully qualified with accelerated, high-temperature lifetime tests and this device has a predicted MTTF of over 600 years at a maximum junction temperature of 200 0C. The device also boasts very high breakdown voltages, which provides customers with reliable and stable operation even in extreme load mismatch conditions.
"MACOM’s GaN power technology offers a significant advantage in higher gain, higher efficiency and improved reliability compared to similar silicon Bipolar and LDMOS power transistors," says Paul Beasly, Product Manager. "The device also provides the highest load mismatch tolerance in its class - a critical parameter to ensure the highest reliability and performance in demanding avionics applications."
The table below outlines typical performance:
Evaluation boards of MAGX-001090-600L00 are available from stock and samples may be ordered now.
MACOM will be showcasing the product at booth #169 at European Microwave Week in Nuremberg Germany, taking place from 8th to 10th, October.