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Toshiba extends SiC Schottky barrier diode family

The firm's latest silicon carbide power device is suited to power factor correction circuits, photovoltaic inverters and uninterruptible power supplies
Toshiba Corporation is expanding its portfolio of 650V SiC Schottky barrier diodes (SBD) with the addition of a 10A product to the existing line-up of 6A, 8A and 12A products.

Toshiba SiC Schottky Barrier Diode

Mass production shipments will start from today.

SiC is a wide-bandgap semiconductor and SiC SBDs provide high breakdown voltage that has never been possible with silicon SBDs. Being unipolar devices, SiC SBDs have very short reverse recovery time and temperature-independent switching behaviour, making them the ideal replacements for silicon fast-recovery diodes, According to Toshiba, SiC SBDs improve power supply efficiency by as much as 50 percent.

What's more, SiC power devices offer more stable operation than current silicon devices - even at high voltages and currents - as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and their industrial applications range from servers to inverters.

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