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Innoscience announces 100V bi-directional GaN IC

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One VGaN can replace two back-to-back Si MOSFETs for 48V/60V battery management applications

Innoscience has launched a 100V bi-directional member of the company’s VGaN IC family, suitable for 48V or 60V battery management systems, high-side load switches in bidirectional converters, and switching circuits in power systems.

According to Innoscience, one VGaN can replace two back-to-back silicon MOSFETs, reducing battery management system size by 33 percent.

The new INV100FQ030A 100V VGaN IC supports two-way pass-through, two-way cut-off and no-reverse-recovery modes of operation. Devices feature a low gate charge of just 90nC, dynamic on-resistance of 3.2mΩ and 4x6mm package size.

The 100V GaN series products are in mass production in En-FCQFN (exposed top side cooling) and FCQFN packaging.

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