Arizona State University to explore potential of AlN
NSF-funded project aims to develop high efficiency power FETs from the ultrawide bandgap semiconductor AlN
Arizona State University's Houqiang Fu, an assistant professor of electrical engineering, has received a US 2024 National Science Foundation Faculty Early Career Development Program (CAREER) Award to explore the potential of the ultrawide bandgap semiconductor aluminium nitride (AlN) in power electronics.
Fu aims to develop AlN power FETs that control power flow with greater efficiency and can handle higher temperatures and more voltage than those made with silicon, SiC or GaN.
While AlN has promising properties, a lack of knowledge regarding how to effectively use the material for power electronics prohibits it from reaching its full capabilities.
Fu will lead a five-year investigation to determine how best to overcome the main problems facing the use of the AlN. This will focus on how best to grow the crystals needed for manufacturing AlN, refine it, fabricate it into power electronic devices and integrate the devices into electrical systems.
“The new AlN power electronics can offer superior performance and significantly impact grid modernisation, transportation electrification and greenhouse gas emissions,” Fu says. “The electronics will also dramatically increase the current grid infrastructure’s resilience, reliability and efficiency. They will also help mitigate power disruptions’ health and economic impact and improve energy security.”
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