EPC Space launches first rad hard GaN power stage IC
Single-chip design integrates driver, eGaN FET half-bridge technology
EPC Space gas announced a 50V, 6A radiation hardened GaN power stage IC designed for space applications. The EPC7011L7SH is a single chip driver plus eGaN FET half-bridge power stage IC in a compact AlN ceramic surface mount package.
Integration is implemented using EPC’s proprietary GaN IC technology. Input logic interface, level shifting, bootstrap charging and gate drive buffer circuits along with eGaN output FETs configured as a half-bridge are integrated within a monolithic chip with high-speed switching capability of 2+ MHz.
The EPC7011L7SH is part of a family of space level rad hard ICs that EPC and EPC Space will be launching starting this year. Rad hard ICs are the next significant stage in the evolution of rad hard GaN power conversion, from integrating discrete devices to more complex solutions that offer in-circuit performance beyond the capabilities of silicon solutions and enhance the ease of design for power systems engineers.
EPC7011L7SH applications include single and multi-phase motor drivers for reaction wheel assemblies (RWAs), robotic actuators, and point of load converters.
For 1000-unit quantities engineering models are priced at $445, and rad hard space qualified are priced at $665.
