Nexperia SiC MOSFETs now in D2PAK-7
1200 V devices deliver high performance in SMD packaging
Nexperia is now offering its 1200 V SiC MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ RDSon values.
This announcement follows Nexperia’s late-2023 release of two discrete SiC MOSFETs in 3 and 4-pin TO-247 packaging and is the latest offering in a series which will see its SiC MOSFET portfolio expand to include devices with RDSon values of 17, 30, 40, 60 and 80 mΩ in flexible package options.
With the release of the NSF0xx120D7A0, Nexperia says it is addressing the growing market demand for high performance SiC switches in SMD packages like D2PAK-7, which is becoming increasingly popular in various industrial applications including EV charging (charge pile, offboard charging), UPS and inverters for solar and energy storage systems.
It also reflects Nexperia’s partnership with Mitsubishi Electric Corporation (MELCO), which has seen the two companies join forces to push the energy efficiency and electrical performance of SiC wide bandgap semiconductors to the next level, while additionally future-proofing production capacity for this technology in response to ever growing market demand.
RDSon is a critical performance parameter for SiC MOSFETs. However, Nexperia says that many manufacturers concentrate on the nominal value, neglecting the fact that it can increase by more than 100 percent as device operating temperatures rise, resulting in considerable conduction losses.
Nexperia has identified this as a limiting factor in the performance of many currently available SiC devices and leveraged the features of its process technology to ensure that its new SiC MOSFETs offer high temperature stability, with the nominal value of RDSon increasing by only 38 percent over an operating temperature range from 25 °C to 175 °C.
