SemiQ adds 1700V SiC Schottky discretes and modules
SemiQ Inc, a developer of high-voltage SiC solutions, has added 1700V SiC Schottky discrete diodes and dual diode packs to its QSiC product line.
The new devices meet the size and power demands of a wide range of demanding applications including switched-mode power supplies, uninterruptible power supplies (UPS), induction heaters, welding equipment, DC/DC converters, solar inverters and electric vehicle (EV) charging stations.
Featuring zero reverse recovery current and near-zero switching loss, SemiQ’s 1700V SiC Schottky diodes are said to feature enhanced thermal management that reduces the need for cooling. As a result, engineers can implement designs that minimise system heat dissipation, allow the use of smaller heatsinks and lead to cost and space savings. All of the new products support fast switching across operating junction temperatures (Tj) of -55 °C to 175 °C.
The GP3D050B170X (bare die) and GP3D050B170B (TO-247-2L package) discrete diode is rated for respective maximum forward currents of 110A and 151A. Device design supports easy parallel configurations, enhancing flexibility and scalability for various power applications.
The GHXS050B170S-D3 and GHXS100B170S-D3 dual diode packs are rugged modules supplied in a SOT-227 package. Maximum respective forward currents are 110A and 214A and each combine high performance at high-frequencies with low loss and low EMI operation.
Key features include low stray inductance, high junction temperature operation, rugged and easy mounting, and an internally isolated package (AIN), which provides optimal insulation and thermal conductivity. Low junction-to-case thermal resistance enables efficient heat dissipation, ensuring stability under high-power conditions. The modules can be connected in parallel due to the positive temperature coefficient (Tc) of the forward voltage (Vf).
All parts have been tested at voltages exceeding 1870V and have undergone avalanche testing up to 1250mJ.
