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Friday 15th November 2013
Density functional theory indicates that the rigidity of the crystalline host structure is a key factor in the efficiency of phosphors used to create white LEDs. Currently, the best phosphors possess a highly rigid structure
Friday 15th November 2013
The new partnership will further strengthen Laser 2000's customer orientated strategy to supply 'customer specific solutions from a single source'
Friday 15th November 2013
The UK Secretary of State for Business, Innovation and Skills opened the new photonics solutions provider's facility in Torquay, Devon, which is expected to further enhance its growth
Friday 15th November 2013
USC chemists have created a solvent which is able to dissolve a series of nine semiconductors made from combinations of arsenic, antimony, bismuth, sulphur, selenium and tellurium. Applying this solution as a thin film to substrates like glass and silicon and evaporating the solvent leaves a high-quality film of crystalline semiconductor - perfect for use in electronics
Thursday 14th November 2013
New gallium arsenide phosphide (GaAsP) detectors, A1 scanners and 25x objective lenses enhance sensitivity detection and longer wavelength Imaging
Thursday 14th November 2013
The firm is also sampling high power GaAs/AlGaAs based VCSELs for volume applications
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Thursday 14th November 2013
The firm's new RedLink transceivers incorporate InGaP/InGaAlP/GaAs technology. They are suited to industrial applications and are compatible with versatile link connectors
Thursday 14th November 2013
The GaN (gallium nitride) power innovator continues to attract global customers across multiple applications
Wednesday 13th November 2013
This acquisition strengthens Excelitas’ UV and LED capabilities and broadens the portfolio of offerings to the fluorescence illumination and microscopy markets
Wednesday 13th November 2013
The firm is buying more TurboDisc K475 reactors to grow III-V based CPV cells to ramp up production
Wednesday 13th November 2013
The meter now provides fourteen different light, colour and spectral measurement quantities to fully characterise any type light source including LEDs in the lab or field
Wednesday 13th November 2013
The gallium nitride device slashes operators' greenhouse gas emissions and utility bills for mobile base stations
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Wednesday 13th November 2013
With a renewed confidence in the technology, Hanergy Solar continues proactive investment in the downstream CIGS solar business
Tuesday 12th November 2013
A novel sputtering manufacturing process coupled with the use of stainless steel substrates enables high efficiency flexible modules without any toxic cadmium in the buffer layer
Tuesday 12th November 2013
Future applications of InP, GaAs and silicon incorporating PICs include quantum computing which is forecasted to be commercialised by 2017. It is expected to take the market by storm and is predicted to grow at a phenomenal rate of 139.6 percent from 2017 to 2022
Tuesday 12th November 2013
The cadmium telluride (CdTe) innovator could begin plant construction in mid-2014, with the facility expected to be commissioned in late 2015
Monday 11th November 2013
Markets for GaAs-based MMICs remain strong, but increasingly impacted by competition from GaN on the power amplifier side and SiGe BiCMOS for signal processing
Monday 11th November 2013
The provider and innovator of optical communications solutions has announced revenues of $96.6 million in the first quarter of fiscal 2014, compared with $95.4 million in the first quarter of fiscal 2013
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Monday 11th November 2013
Using a simple barium (Ba) evaporation technique in a molecular oxygen background, it is now possible to grow crystalline BaO films on GaAs (100) substrates even at room temperature. Such a BaO buffer layer has been found to decrease the density of interface defects at the Al2O3/GaAs(100) junction
Sunday 10th November 2013
The organisation says its latest development is set to reduce the cost of solar power
Sunday 10th November 2013
Incorporating miniscule amounts of sodium and potassium into the copper indium gallium diselenide layer can alter its electronic properties and improve efficiency
Sunday 10th November 2013
The firm intends to bring its III-V high-brightness MBE grown long-wavelength CW laser diodes to market as soon as possible
Friday 8th November 2013
The company's high voltage circuits and assemblies will benefit from silicon carbide chips that offer unprecedented voltage ratings and ultra-high speed switching
Friday 8th November 2013
Accurate realisation of resistance in terms of elementary charge e and the Planck constant h is independent of other factors. researchers say it can therefore be used as a universal standard for resistance

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