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News

News

Tuesday 31st December 2019

Harnessing hot carriers in perovskite solar cells

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Tuesday 24th December 2019

BaZrS3 films hold promise for solar cells and LEDs

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Friday 20th December 2019

Cheaper solar energy one step closer?

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Thursday 19th December 2019

Atom Power launches 2nd gen SiC-based Digital Circuit Breaker

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Thursday 19th December 2019

EPC to Display GaN-Enabled applications at 2020 CES

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Thursday 19th December 2019

NUS team develops large area, flexible perovskite IR LEDs

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Thursday 19th December 2019

Researchers develop High-Efficiency Flip-Chip GaN LED

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Thursday 19th December 2019

TowerJazz and Aledia partner on Nanowire-LEDs

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Thursday 19th December 2019

Teledyne e2v unveils hi-rel 650V GaN HEMT

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Thursday 19th December 2019

ON Semi and GaN Systems announce 300W Adapter Ref Design

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Wednesday 18th December 2019

IEEE honours Fujitsu for HEMT invention

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Tuesday 17th December 2019

Transphorm GaN in Airbus and Boeing Power Supplies

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Tuesday 17th December 2019

SPARX invests in GaN Systems

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Tuesday 17th December 2019

Maxim launches SiC gate driver

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Tuesday 17th December 2019

AI may help make spray-on perovskite cells

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Tuesday 17th December 2019

Heat model could lead to longer lasting chips

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Monday 16th December 2019

Automotive lighting: a building block of autonomous driving

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Friday 13th December 2019

Navitas $50,000 GaNFast Give-Away at CES 2020

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Friday 13th December 2019

RENA acquires US-based MEI

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Friday 13th December 2019

GaN Foundry IVWorks raises $6.7 Million

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Thursday 12th December 2019

Dana shows SiC Inverters at CTI Berlin

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Thursday 12th December 2019

SiC technology delivers highest power density ELR

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Thursday 12th December 2019

Fujitsu uses diamond film to boost GaN HEMT Heat Dissipation

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Thursday 12th December 2019

Mitsubishi Expands Ku-band GaN-HEMTs range