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Thursday 6th February 2014
The firm has announced the availability of its full line of indium gallium nitride RedLink transmitters and receivers in vertical style packages
Thursday 6th February 2014
European scientists will use indium gallium arsenide and silicon germanium and design concepts to demonstrate a working prototype of a new type of 3D-stacked hybrid SRAM cell
Wednesday 5th February 2014
The transaction combines two preeminent suppliers of critical technology to the compound semiconductor Industry
Wednesday 5th February 2014
The tool can be used to view the surface morphology on III-V based wafers
Wednesday 5th February 2014
The global electronic components distributor will supply MACOM's RF, microwave and millimetre-wave devices
Wednesday 5th February 2014
A new technology enables the capture of high-energy photons more efficiently in CIS solar cells
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Tuesday 4th February 2014
The indium antimonide substrates are suited for use in MWIR focal plane infrared detectors
Tuesday 4th February 2014
The EPC9013 high current development board incorporating 100 V eGaN FETs features multiple half-bridges in parallel
Tuesday 4th February 2014
By emitting photons from an indium gallium nitride quantum dot at the top of a GaN micropyramid, researchers have created a polarised light source. The device can be used in applications such as energy-saving computer screens and wiretap-proof communications
Tuesday 4th February 2014
Nearly all surfaces in a car can be individually illuminated with the III-nitride LED modules. All products are wireless, feature four dimming levels and light up in red, blue, green, orange, pink, turquoise or white
Monday 3rd February 2014
The company is strengthening its supply of gases for LED semiconductor production
Monday 3rd February 2014
By 2017, revenues for LEDs in lighting applications are expected to reach a total value of $13 billion
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Monday 3rd February 2014
Power electronics innovator's ABB's main role in a newly announced consortium is performance and reliability testing of materials in converter applications
Monday 3rd February 2014
The indium phosphide based PICs will be employed in Pennsylvania and New Jersey
Monday 3rd February 2014
The gallium arsenide device features radiant intensity to 350 mW/sr at 1 A, optical power to 660 mW, and thermal resistivity down to 10 K/W
Monday 3rd February 2014
Singulus supplied the technology and support for the key production processes
Friday 31st January 2014
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Friday 31st January 2014
Modulight, an ISO13485 certified laser manufacturer based in Tampere, Finland and San Jose CA, have announced two complementary additions to their OEM laser system platform. Whereas ML6500, released in 2013, introduced the smallest form factor and the widest wavelength spread high-power multimode laser modules in the industry, the new release complements this with the ML6400 single-mode laser systems and ML6600 multi-wavelength laser systems. The smaller sibling ML6400 footprints 2
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Friday 31st January 2014
Quarterly Highlights: Quarterly Revenue Increases 6% Year-Over-Year To $288.5 Million
Friday 31st January 2014
II-VI Laser Enterprise, a subsidiary of II-VI Incorporated will debut new products from its expanded Seed Laser portfolio at Photonics West 2014. These include a new Fabry Perot (FP) laser diode module with ultra-broad band fiber Bragg grating (FBG) for high peak power pulsed Fiber Lasers and a Distributed Feedback (DFB) laser diode module designed for seeding of sub-nanosecond Fiber and Solid State lasers.
Friday 31st January 2014
Osram Opto Semiconductors is switching its fabrication of red, orange and yellow light emitting diodes to 6-inch wafers. The German high-tech company is extending the fabrication of all large-wafer LEDs to the indium-gallium-aluminum-phosphide (InGaAlP) material system and expanding its production capacity. The company began switching fabrication of blue LED chips back in 2011.
Friday 31st January 2014
GaN Systems Inc, a developer of gallium nitride power switching semiconductors, is presenting a technical paper at APEC describing the application of SPICE models developed for very high power GaN devices and integrated GaN drive circuits in automotive applications. At present, drive train power requirements of most hybrid vehicles (HVs) and electric vehicles (EVs) are met by using silicon IGBT devices, but it is expected that gallium nitride will take over as the technology of choice for this market in the near future, as GaN power transistors provide greatly enhanced performance in these applications, thanks to lower on-resistance and minimal switching losses compared to silicon-based semiconductors.
Friday 31st January 2014
GaN’s hardness, crystalline structure and wide bandgap make it ideal for a variety of applications. These include light-emitting diodes, laser diodes that read blu-ray discs, transistors that operate at high temperatures, solar cell arrays for satellites, biochemical sensors and, because of GaN’s relative biocompatibility, electronic implants in humans.
Friday 31st January 2014
Cree have announced that John Replogle, president and chief executive officer, Seventh Generation, has been appointed to the company’s board of directors, effective January 28, 2014.

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