By emitting photons from an indium gallium nitride quantum dot at the top of a GaN micropyramid, researchers have created a polarised light source. The device can be used in applications such as energy-saving computer screens and wiretap-proof communications
Nearly all surfaces in a car can be individually illuminated with the III-nitride LED modules. All products are wireless, feature four dimming levels and light up in red, blue, green, orange, pink, turquoise or white
Modulight, an ISO13485 certified laser manufacturer based in Tampere, Finland and San Jose CA, have announced two complementary additions to their OEM laser system platform. Whereas ML6500, released in 2013, introduced the smallest form factor and the widest wavelength spread high-power multimode laser modules in the industry, the new release complements this with the ML6400 single-mode laser systems and ML6600 multi-wavelength laser systems. The smaller sibling ML6400 footprints 2
II-VI Laser Enterprise, a subsidiary of II-VI Incorporated will debut new products from its expanded Seed Laser portfolio at Photonics West 2014. These include a new Fabry Perot (FP) laser diode module with ultra-broad band fiber Bragg grating (FBG) for high peak power pulsed Fiber Lasers and a Distributed Feedback (DFB) laser diode module designed for seeding of sub-nanosecond Fiber and Solid State lasers.
Osram Opto Semiconductors is switching its fabrication of red, orange and yellow light emitting diodes to 6-inch wafers. The German high-tech company is extending the fabrication of all large-wafer LEDs to the indium-gallium-aluminum-phosphide (InGaAlP) material system and expanding its production capacity. The company began switching fabrication of blue LED chips back in 2011.
GaN Systems Inc, a developer of gallium nitride power switching semiconductors, is presenting a technical paper at APEC describing the application of SPICE models developed for very high power GaN devices and integrated GaN drive circuits in automotive applications. At present, drive train power requirements of most hybrid vehicles (HVs) and electric vehicles (EVs) are met by using silicon IGBT devices, but it is expected that gallium nitride will take over as the technology of choice for this market in the near future, as GaN power transistors provide greatly enhanced performance in these applications, thanks to lower on-resistance and minimal switching losses compared to silicon-based semiconductors.
GaN’s hardness, crystalline structure and wide bandgap make it ideal for a variety of applications. These include light-emitting diodes, laser diodes that read blu-ray discs, transistors that operate at high temperatures, solar cell arrays for satellites, biochemical sensors and, because of GaN’s relative biocompatibility, electronic implants in humans.