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Friday 25th October 2013
With analysts predicting significant growth in the SiC power device market, Toshiba is expanding its SBD line-up to meet an anticipated spike in demand
Friday 25th October 2013
Cree has introduced two new XLamp(R) LED Arrays to enable high-lumen applications ranging from wallpacks to canopy lighting with one CXA LED family. The new CXA3590 LED Array delivers up to 16,225 lumens at 85°C, 68 percent more lumens compared to Cree's previous brightest array. The CXA3590 LED Array is the ideal light source to replace 250-watt metal halide (MH) fixtures--using 40 percent less power and designed to last twice as long.
Friday 25th October 2013
Dow Corning today announced the appointment of Tang Yong Ang “TY.” to vice president of Dow Corning’s Compound Semiconductor Solutions, a provider of silicon carbide wafer and epitaxy product lines to the global power electronics industry. In this critical, newly created role, effective October 1, TY will lead the company’s expanding Compound Semiconductor Solutions business, and report to the general manager of the Specialty Chemicals business. This signals a major strategic step for Dow Corning, and highlights the company’s increased focus and support for the exciting and promising SiC power electronics market.
Thursday 24th October 2013
IQE announces the signing of an initial three-year supply contract with Philips Technologie GmbH (“Philips”) for epi-wafers used for the manufacturing of Vertical Cavity Surface Emitting Laser (VCSEL) devices.
Thursday 24th October 2013
LayTec has announced that Epistar Corp. has qualified LayTec´s in-situ metrology system Pyro 400 for its GaN LED production. The worldwide LED manufacturer based in Taiwan will now use high accuracy GaN surface temperature sensing with Pyro 400.
Thursday 24th October 2013
Markets for pulsed RF power devices up to 18 GHz are expected to show continued solid growth over the next five years despite the current economic turmoil and cuts in defence spending. While the volatility of many global electronics markets is fuelled by their association with consumer spending, markets for pulsed RF power devices are supported by quite different priorities.
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Thursday 24th October 2013
AIXTRON a provider of deposition equipment to the semiconductor industry, today announced revenues of EUR 46.2m for the third quarter 2013, representing a slight increase compared to the previous quarter. In the same quarter last year, revenues amounted to EUR 62.2m. In spite of the lower percentage of final acceptances, which usually have a positive earnings effect, relative to Q2/2013 revenues, the Company's EBIT was improved even before unusual effects. This is particularly attributable to the positive cost effects and efficiency gains from the 5-Point-Program initiated in Q1/2013. Thus, the Company is on track to reduce its annual operating expenses by about 20%.
Wednesday 23rd October 2013
The company expects continued margin expansion, operating leverage and EPS growth
Wednesday 23rd October 2013
LEDinside's September LED lamp ASP survey says the global ASP for a 40W equivalent LED lamp rose by 2.8 percent. The good news for consumers was that during the same period, the ASP for a 60W equivalent LED lamp slid by 2.5 percent
Wednesday 23rd October 2013
RIBER, provider of molecular beam epitaxy , recorded €10.2 million euros in revenues at the end of September 2013. Revenues for the third quarter of 2013 came to €2.4 million, compared with €7.3 million for the third quarter of 2012. RIBER is able to confirm its full-year revenue and profitability targets.
Wednesday 23rd October 2013
Soraa, developer of GaN on GaN LED technology, announced today that it has been awarded several million dollars in funding by U.S. Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) to pursue two projects related to the development of bulk GaN substrates for power electronics. The company has been selected under the ARPA-E's SWITCHES program to conduct the first phase of a 4 year, $3.2 million project to develop a revolutionary, U.S.-based technology for large-area, low-cost, high-quality bulk GaN substrates and to validate their performance in state-of-the-art power switches. Soraa also has an ongoing $4.75 million award from ARPA-E to develop ammonothermal bulk gallium nitride substrates for LEDs, vertical power devices, and next-generation power electronics. Soraa is partnering with Avogy Inc., a San Jose start-up and a pioneer in the development of GaN power devices on native GaN substrates, to evaluate the new substrates for power electronics applications and develop new, high performance vertical GaN transistors.
Tuesday 22nd October 2013
The silicon carbide system holds up to 25, six inch wafers at a time and automatically delivers wafers to the process chamber via a transfer/load-lock chamber
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Tuesday 22nd October 2013
By mid-2014, the company plans to deliver to industry, and its development partners, a fully-integrated III-V monolithic optoelectronic semiconductor chip based on the company’s POET platform
Monday 21st October 2013
Skyworks Solutions have announced that its wireless connectivity front-end modules (FEMs) are being leveraged by Broadcom Corporation for use in several of the company’s 5G WiFi solutions, enabling some of the fastest download speeds available in access points, routers, DSL/cable gateways, PCs, smartphones and tablets. Skyworks’ complete 2.4 and 5 gigahertz (GHz) 802.11a/g/n/ac solutions integrate the power amplifier, filter, power detector, transmit/receive (T/R) switch, diplexer and associated matching in an ultra-compact form factor, delivering all the essential functionality from the output of the SOC to the antenna.
Monday 21st October 2013
Riber, a global manufacturer of molecular beam epitaxy (MBE), is announcing the sale of a 4” wafer capacity R&D MBE system to a leading material research institute in China
Monday 21st October 2013
The company is sampling its new gallium nitride (GaN) and gallium arsenide (GaAs) hybrid power doublers as well as its MMIC power doublers
Sunday 20th October 2013
The Chinese firm is poised to overtake the Taiwanese firm in gallium nitride LEDs
Sunday 20th October 2013
The RFCM3316 gallium nitride device combines compact size with decreased current consumption. It allows CATV operators and MSOs an easy upgrade path to meet new DOCSIS 3.1 requirements
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Sunday 20th October 2013
An optical information carrier composed of tungsten and silicon nitride can store information for extremely long periods of time, with each bit being written using etching techniques
Sunday 20th October 2013
The firm's silicon carbide MOSFETs claim as much as 90% lower switching loss compared to silicon devices
Sunday 20th October 2013
The company’s ticker symbol will remain “FCS”
Thursday 17th October 2013
The company has an install base of more than 35,000 supported systems worldwide.
Wednesday 16th October 2013
Commercial high-lead versions of EPC’s enhancement mode gallium nitride (eGaN) FETs, the EPC2801, EPC2815, and EPC2818, are now available
Wednesday 16th October 2013
The Israel-based firm which has developed III-V based multi-junction solar cells has sold off its IP, inventory and equipment to Suncore

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