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Friday 3rd May 2013
'IQE Infrared' will provide complete 'one stop shop' for infrared substrate and epitaxial wafer materials covering short to very long wavelength regimes.
Friday 3rd May 2013
The bonds tol finance the construction of a 44 MWp utility-scale CPV solar power plant
Thursday 2nd May 2013
GAAP net revenue was $405.3 million, with net loss of $(28.0) million, or $(0.12) per share. Prior quarter net revenue was $429.4 million, with net income of $4.1 million, or $0.02 per share. Net revenue for fiscal 2012 third quarter was $403.3 million, with net loss of $(17.4) million, or $(0.08) per share.
Thursday 2nd May 2013
Highly transparent, 2-inch AlN promises to enhance the performance of RF devices and deep UV lasers and LEDs.
Wednesday 1st May 2013
New product innovations in Avalanche Photodiodes offer an enhanced optical damage threshold and increased reliability
Wednesday 1st May 2013
Research and Markets has announced the addition of the
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Tuesday 30th April 2013
InAs (indium arsenide), GaAs (gallium arsenide) and CdSe (cadmium selenide) will be some of the materials used to produce quantum dots in proposed solar cell research
Tuesday 30th April 2013
The firm says its new tool results in a perfect lamination process, which is the key to high-quality modules
Tuesday 30th April 2013
The project will also focus on in-line high throughput manufacturing technologies for light weight construction for aerospace
Tuesday 30th April 2013
Aluminium gallium nitride technology and can withstand continuous exposure to UV light without damage
Tuesday 30th April 2013
The gallium nitride-on-diamond technology enables high performance, low heat operation and significantly smaller transistors
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Tuesday 30th April 2013
The VERSALINE processing tools will support backside GaAs RF power amplifier and switch chip production
Monday 29th April 2013
From 2012 to 2022 silicon carbide and gallium nitride power revenues are set to soar from $143 million to $2.8 billion
Monday 29th April 2013
The digital SFH 7776 sensor contains a GaAs (gallium arsenide) based infrared LED and two detectors. It registers the ambient brightness in order to control the display backlighting and also deactivates the touch function on the display as soon as you hold a phone up to your ear
Monday 29th April 2013
The firm's multi-junction solar cell's result was verified by NREL and beats the firm's previous record of 34.2 percent
Monday 29th April 2013
The firm managed to improve efficiency by incorporating an InGaAs layer at the bottom of its InGaP / GaAs compound solar cell
Monday 29th April 2013
The firm's revenues went up from $364.7 million in Q2 FY2013 up to $425.2 million in Q2 FY2012 and incomes also went up year over year
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Friday 26th April 2013
The French headquartered firm will talk about InGaAs, InSb, HgCdTe and MCT at SPIE DSS 2013
Friday 26th April 2013
At CS Mantech 2013, Hitachi Cable will present its gallium nitride based templates grown on sapphire
Thursday 25th April 2013
The company will showcase its products at PCIM booth #523, Hall 9, Nuremburg Messe, taking place between 14th and 16th May
Thursday 25th April 2013
To make lasers and LEDs both n-type and p-type materials are used. Researchers have claimed that shedding excess energy at the p-n junction is what produces light in both these types of devices
Wednesday 24th April 2013
Auger recombination could be responsible for the LED droop phenomenon
Wednesday 24th April 2013
The companies will work together to accelerating R&D of new materials and manufacturing processes for LEDs using Intermolecular's technology

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