Nexperia launches first GaN FET
Robust 650V device in TO-247 packaging is first in a portfolio of GaN devices from the company
Nexperia, a Netherlands-based specialist in discrete and MOSFET components and analogue and logic ICs, today announced its entry into the GaN FET market with the introduction of the 650V GAN063-650WSA.
The devices is said to be highly robust device with a gate-source voltage (VGS) of +/- 20 V and a temperature range of -55 to +175degC. The GAN063-650WSA features a low RDS(on) - down to 60 mΩ - and fast switching to offer very high efficiency.
Nexperia is targeting electric vehicles, data centres, telecom infrastructure, industrial automation and high-end power supplies. The device is available in the industry-standard TO-247, allowing customers to benefit from exceptional GaN performance in a familiar package.
Toni Versluijs, general manager of Nexperia MOS Business Group said: “This is a strategic move for Nexperia into the high voltage area, and we can now deliver technology suitable for xEV power semiconductor applications. Our GaN is a technology that is ready for volume production, and with scalability to meet high volume applications. The automotive sector is a key focus for Nexperia and one which is forecast to grow significantly for two decades as electric vehicles replace those powered by traditional internal combustion engines as the preferred means of personal and public transport.”
The GAN063-650WSA GaN FET from Nexperia is the first in a portfolio of GaN devices that Nexperia is developing to address the automotive, communication infrastructure and industrial markets.