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Monday 11th March 2013
The grant was undertaken under NASDAQ Marketplace Rule 5635
Monday 11th March 2013
Thanks to UV curing, UV LEDs should become a $270 million business by 2017, and could hit $300 million if new applications boom
Monday 11th March 2013
The gallium nitride amplifiers deliver performance and versatility for commercial and defence systems
Friday 8th March 2013
The firm will provide a stable source of materials to the supplier of metal organics to MOCVD semiconductor manufacturers
Friday 8th March 2013
Many of the largest players in the compound semiconductor industry were acknowledged by their customers in the voting process
Friday 8th March 2013
The firm says the reason for the late filing is due to it reviewing the timing of revenue recognition of MOCVD systems and related upgrades to these systems
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Thursday 7th March 2013
Advances in chip technology, the benefits brought by the latest manufacturing tools and insights into market trends all featured at CS International Conference.
Thursday 7th March 2013
Optimising colloidal quantum dot growth leads to significant improvements in capturing a broader range of the solar spectrum more effectively
Wednesday 6th March 2013
Following the closure of the silicon carbide device manufacturer several months ago, semiconductor fabrication, electronic test , dicing and final assembly equipment are to be disposed of
Wednesday 6th March 2013
The firm's III-nitride based LED bulb is shaped like a traditional light bulb but works more efficiently and lasts 25 times longer. It provides a compact optically balanced light source within a real glass bulb to deliver warm light to consumers
Wednesday 6th March 2013
The firm's low Inductance, higher temperature capable silicon carbide mini-modules enable 175 degree C operation are suited to industrial motors, solar inverters and power grid applications
Tuesday 5th March 2013
The firm's new technology builds on its basic GaAs approach, but implements a second junction with indium gallium phosphide (InGaP) as the absorber on top of the base cell. The technology will enable significant battery life extension in mobile devices
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Tuesday 5th March 2013
The result builds on the previous GaAs (gallium arsenide) based VCSEL milestone. It is a further verification that III-Vs can compete with silicon CMOS in WDM capable optoelectronic devices and functions, FETs and bipolar devices
Tuesday 5th March 2013
The firm will show how its indium phoshide based platform, which enables integrated OTN switching and intelligent networking, can lower total cost of ownership for cable operators
Tuesday 5th March 2013
The firm's new solutions will enable covalent combinations of compound semiconductors, other engineered substrates and heterogeneous materials integration for applications such as high mobility transistors and novel RF devices
Tuesday 5th March 2013
A new white paper written by SEMI analysts contains recommendations to move beyond trade litigation and encourage an accelerated path towards dispute resolution
Monday 4th March 2013
Three new appointments have been made to enhance IPG's strategic marketing, acquisition and global sales initiatives of its laser products
Monday 4th March 2013
The company will have over 8 million options for future grants under the amended plan
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Monday 4th March 2013
The company eventually intends to use the proceeds for general corporate purposes, including repayment of debt and share repurchases
Monday 4th March 2013
The firm's CEO and applications experts will conduct a half-day seminar and technical presentations on gallium nitride FET technology and applications
Monday 4th March 2013
The firm's InP (indium phosphide) based DTN-X platform will provide links between Italy, Greece, Turkey, Israel and Cyprus
Monday 4th March 2013
The company's QC3 diffractometer is suited for analysing III-V semiconductor and nitride based LEDs. The production worthy system can accommodate up to 20 wafers in a single measurement process
Friday 1st March 2013
Despite a turnaround in quarterly profits, reversing the loss of a year ago, the cadmium telluride cell manufacturer's shares fell 8 percent. This could be after the company remained tight-lipped about an earnings and sales outlook for 2013
Friday 1st March 2013
The gallium arsenide devices are suited to 38 GHz & 42 GHz applications

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