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Thursday 4th July 2013
The university has filed a patent against the consumer electronics giant. The patent relates to a method of growing insulating monocrystalline gallium nitride thin films using MBE
Thursday 4th July 2013
The firm's indium phosphide PICs will be used in delivering 10, 40 and 100 Gigabit Ethernet (GbE) services
Thursday 4th July 2013
The firm's gallium nitride substrates will allow for GaN-on-GaN growth. This will result in devices that have double the thermal conductivity and 100-1000 times fewer crystal defects than GaN grown on sapphire and silicon substrates
Thursday 4th July 2013
The combination of using a continuous flow reactor, which is much faster than batch mode synthesis, commonly used for CIGS, and the use of cheap environmentally friendly materials promises to cut costs
Wednesday 3rd July 2013
The manufacturer of indium phosphide (InP) based photonic integrated circuits (PICs), has opened a new factory to cope with rising demands. NeoPhotonics will target high volume optical modules in cloud computing, broadband access, and 4G/LTE wireless networks
Wednesday 3rd July 2013
These gallium nitride-on-silicon HB LEDs are being designed into replacement products as well as architectural lighting, street lighting, commercial lighting and medical applications
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Wednesday 3rd July 2013
The largest price reduction was in Taiwan, but the US also experienced a decrease
Tuesday 2nd July 2013
The 5 day conference will feature talks and presentations discussing many topics, including those using compound semiconductors. These will include InP telecoms, InGaAs imaging systems and photovoltaics
Tuesday 2nd July 2013
The manufacturing of the firm's CIS modules has resumed following the streamlining of all production at Solar Frontier's Kunitomi Plant in 2012
Tuesday 2nd July 2013
Both aluminium gallium arsenide DIE are fully passivated with silicon nitride (SiN) and incorporate 20 W absorptive and reflective Ka-Band switches
Monday 1st July 2013
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Monday 1st July 2013
The company's latest product line targets growth opportunities in the silicon carbide power electronics market
Monday 1st July 2013
The firm's gallium nitride devices will be used for defence, industrial, aerospace and commercial applications
Monday 1st July 2013
The firms intend to acquire exclusive access to this indium phosphide coherent modulator technology. u2t has also acquired all of the assets of COGO Optronics GmbH
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Monday 1st July 2013
The deployment of the firm's cadmium telluride (CdTe) modules will provide approximately 300 jobs in New Mexico
Saturday 29th June 2013
Grown on a 6 inch silicon substrate, these LEDs are designed for solid state lighting applications
Thursday 27th June 2013
The gallium nitride based MBE grown devices developed by researchers have a PL efficiency as high as 77 percent
Thursday 27th June 2013
The company will use the cash to further develop its gallium arsenide (GaAs) based Solink technology which is currently claimed to increase solar module efficiency by up to 25 percent
Thursday 27th June 2013
Researchers have found that in-situ monitoring can provide vital information on the evolution of indium phosphide nanowire lengths and diameters during growth
Thursday 27th June 2013
This LED has a gallium nitride substrate, triangular shaped chip, simplified epitaxial structure and an original silicon-based wafer level packaging

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