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Tuesday 24th September 2013
The modified III-V structure has four solar subcells and was grown using a new technology. The process allows the connection of two semiconductor crystals, which otherwise cannot be grown on top of each other with high crystal quality
Tuesday 24th September 2013
Suitable for use in lasers, a novel preparation method of cadmium telluride quantum disks can leads to more stable nanocrystals compared to conventional preparation methods. Tuning the shape of the disks can strongly improve conditions for lasing or single-photon emission
Tuesday 24th September 2013
MBD has increased the reach of its indium phosphide DTNX platform to new high-bandwidth sites in DC and Virginia
Tuesday 24th September 2013
When combined with red nitride or other red phosphors, arrangements also covered by these patents, CRIs up to 98 (out of 100) have been demonstrated. The firm's latest technology is also instrumental to meeting new standards such as California’s Quality LED Lamp Specification
Monday 23rd September 2013
Bandgap materials GaN and SiC are generating significant buzz globally. Strategy Analytics expects SiC to be the primary replacement technology for silicon power devices, while GaN seeks initial commercial traction in applications with breakdown voltages of less than < 600V and power requirements of less than 5kW
Monday 23rd September 2013
The new variant of the III-nitride based LED Osram Ostar Headlamp Pro enables the simple implementation of Advanced Forward Lighting Systems
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Monday 23rd September 2013
The compact indium phosphide (InP) PIC narrow linewidth μITLA and compact ICR enable higher port density on 100G and above coherent line cards and transponders
Monday 23rd September 2013
The expansion boosts the firm's internal assembly and advanced flip chip capabilities
Monday 23rd September 2013
Scrutinising samples with several microscopes reveals the presence of anti-phase boundaries in GaP that jump from one atomic plane to another
Friday 20th September 2013
The firm's new silicon carbide MOSFETs provide higher efficiency, power density and lower system BOM for power conversion systems
Friday 20th September 2013
The latest indium phosphide micro-iTLA tuneable form factor enables next generation 100G coherent networks
Friday 20th September 2013
MACOM has agreed to make a one-time settlement payment of $7.25 million to GigOptix and each company has agreed to dismiss all suits against the other
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Friday 20th September 2013
The latest III-nitride modules are suited to retail lighting and have an interchangeable, Zhaga-compliant mounting socket
Thursday 19th September 2013
The cash will be used to bring the gallium arsenide (GaAs) based Solink technology, to the next stage of development. The firm's high efficiency photovoltaic ink will increase efficiency of solar modules by up to 25 percent
Thursday 19th September 2013
The new gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion and Class D Audio applications
Thursday 19th September 2013
The firm's latest silicon carbide power device is suited to power factor correction circuits, photovoltaic inverters and uninterruptible power supplies
Thursday 19th September 2013
The CXA high-density III-nitride based arrays enable the next generation of LED spot lights
Thursday 19th September 2013
The move to gallium nitride-on-silicon carbide is to reduce platform cost and address growth opportunities in power applications
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Thursday 19th September 2013
The compact Osram III-nitride based LED is suited for automotive headlights now comes with two chips for greater brightness
Thursday 19th September 2013
The wireless communications market accounts for a whopping 85 percent of the group's sales
Wednesday 18th September 2013
Etching a sacrificial GaN layer with oxalic acid boosts LED light extraction
Wednesday 18th September 2013
Cooperation between the firms will accelerate development of a cost efficient solution for large area ALD in the thin film PV & display market
Wednesday 18th September 2013
The integrated company will accelerate III-nitride LED technology development and market expansion
Wednesday 18th September 2013
The internally-matched gallium nitride-on-silicon carbide pulsed device provides high gain, efficiency and ruggedness over the 1030 to 1090 MHz bandwidth

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