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Laser Components Adds New InAs Detector Diode

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Compared to traditional InAs products, new IA35 offers twice the shunt resistance with an area four times larger

Laser Components, a manufacturer of photovoltaic InAs sensors, has introduced the IA-35-Series quantum detector in a universal TO-46 style package. The device was developed at the company's facility in Tempe, Arizona.



The IA35 is a heterostructure photodiode on an InAs substrate with a relatively wide response peaking at 2.8 microns. The wavelength range goes out to 3.5 microns, 20 percent cut off. The characteristic of the spectral response can be seen in the image above.

The InAs semiconductor material absorbs incident IR photons creating electron hole pairs which are swept towards external electrodes by the internal field within the diode. The detectors are operated in the photovoltaic mode which is a good choice in many applications due to large sensitivity, rapid response, low noise and wide dynamic range.

The IA35 has a 0.5mm diameter active area and is designed specifically for uncooled operation. Compared to traditional InAs products, the IA35 offers twice the shunt resistance, 700 Ohms, with an area that is four times larger.

The IA35 is produced in a universal TO-46 style package, and sealed with a sapphire window. These detectors have long expected lifetimes making them ideal for fit and forget applications such as gas identification, non-contact temperature measurement, diode laser characterisation and spectrophotometry.

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