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Tuesday 1st October 2013
The firm's gallium arsenide (GaAs) based 850 nm infrared Dragon Dome LEDs will have a usable range of more than 100 metres, depending on the sensitivity and field of view of the camera
Tuesday 1st October 2013
The firm's source system features integrated heating and control useful in LED and solar cell growth
Tuesday 1st October 2013
The baSiC-T tool is suited for the growth of silicon carbide for high-performance electronics
Tuesday 1st October 2013
The firm has shipped its QDEF devices to LCD manufacturers to bring perfect colour and high energy efficiency to millions of devices
Tuesday 1st October 2013
New low-heat, high-efficiency white lighting LD options could avoid the droop issue associated with LEDs
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Tuesday 1st October 2013
Infineon has still maintained leadership in this sector
Monday 30th September 2013
The AURP has honoured Emcore for its III-v solar cell technology development
Friday 27th September 2013
The US Department of Energy has provided the funding to the firms to design power-saving GaN (gallium nitride) and SiC (silicon carbide) semiconductors for next generation vehicles
Friday 27th September 2013
The CdTe (cadmium telluride) solar cell manufacturer will design and build the project in the 2,000-acre segment of the Moapa Band of Paiutes tribal land
Friday 27th September 2013
The firm received many of its orders from Research laboratories
Friday 27th September 2013
The firm's latest SiC (silicon carbide) - based LEDs follow on from the XQ series launched in May and are 78 percent smaller than Cree's XP-E2 modules
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Thursday 26th September 2013
The packaged LED market will balloon from $13.9 billion in 2013 to $16 billion by 2018, driven mainly by general lighting and completed by display applications
Thursday 26th September 2013
A novel modular, SMT-optimised approach unlocks the full promise of gallium nitride in plastic for radar applications
Thursday 26th September 2013
The new Praxair China Technology Centre is a state-of-the-art facility for applications engineers and Research and Development
Thursday 26th September 2013
The aluminium nitride templates, produced using HVPE, have been sold to a major Asian LED manufacturer
Thursday 26th September 2013
With this board space reduction, network infrastructure OEMs can reduce the size of radio systems and their bills of materials
Wednesday 25th September 2013
A collaborative project set up by the German Ministry will develop gallium nitride power devices for applications in aeronautics and communications electronics
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Wednesday 25th September 2013
As the number of the cascaded LEDs increases, efficiency droop is greatly reduced
Wednesday 25th September 2013
The indium arsenide antenna arrays enable the detection of small volumes of materials with a standard infrared spectrometer
Wednesday 25th September 2013
In the high-power LUXEON Q III-nitride device, high flux and high efficacy are achieved in a standard 3535 surface-mount package
Wednesday 25th September 2013
Celebrate 10 Years of Success Together With LED Industry’s Largest Event
Wednesday 25th September 2013
The miniature devices are composed of Oclaro's Opbext aluminium indium gallium phosphide (AlInGaP) and aluminium gallium arsenide (AlGaAs) laser diodes with externally adjustable optics. They also incorporate a Panasonic aspherical glass lens in a rugged modular anodised aluminium housing
Wednesday 25th September 2013
The 3.8mm diameter super-bright device delivers more power but uses less energy. This is thanks to new processes, including an optimised waveguide structure and fine-tuning of the laser device structural parameters

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