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Tuesday 8th October 2013
Specialist US engineering consultancy Vqdot will bring expertise to new generation products at GaN Systems
Monday 7th October 2013
The manufacturer of consumer and off-grid products integrated with flexible thin-film photovoltaic modules is selling its mobile device chargers through Walmart's website
Monday 7th October 2013
The GENxplor system will be used to grow III-V lasers, photo detectors, and solar cells
Monday 7th October 2013
The firm's silicon carbide epitaxial wafers will contribute to the commercialisation of next-generation inverters for the power device market
Sunday 6th October 2013
The manufacturer of gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates is now looking for someone to fill the CFO position
Sunday 6th October 2013
A new type of photodiode composed of silicon carbide and gallium oxide shows promise for space-based communication and monitoring ozone depletion
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Friday 4th October 2013
The analysts forecast the Global Gallium and Arsenic (GaAs) Device market to grow at a CAGR of 3.1 percent over the period 2012-2016. One of the key factors contributing to this market growth is the increasing global adoption of smartphones. The Global GaAs Device market has also been witnessing an increasing number of collaborations among GaAs device manufacturers. However, increasing threat from alternate technologies could pose a challenge to the growth of this market.
Friday 4th October 2013
Mr Willetts was in Oxfordshire to launch a major initiative promoting the county as a centre for scientific excellence and innovative technology, and took the opportunity to visit one of the UK’s leading businesses that is supporting the growth in nanotechnology based research and product manufacture. Oxford Instruments was the first commercial spin-out from Oxford University in 1959 and has a worldwide reputation for its innovative, high-technology tools and systems.
Friday 4th October 2013
Veeco Instruments announced today that the University of Nottingham, United Kingdom, purchased two GENxplor™ R&D Molecular Beam Epitaxy (MBE) Systems for its School of Physics and Astronomy. The systems will enable the growth of high quality, large area layers of graphene and boron nitride for advanced electronic and optoelectronic applications.
Thursday 3rd October 2013
At less than $10 for a 60W dimmable light bulb, Walmart and GE are bringing LED technology to the masses
Thursday 3rd October 2013
Anadigics’ indium gallium phosphide (InGaP) technology is utilised in the 802.11ac WiFi Front-End IC, ProEficient power amplifier, and HELP4 power amplifier
Thursday 3rd October 2013
The Harmonia lamp, based on the firm's III-nitride LED chips, has been honoured for its slim, sleek design and dual-sided illumination that can build light harmony in any surroundings
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Thursday 3rd October 2013
Specifically designed for the commercial and residential markets, the cost optimised LEDs are based on the firm's Vero product line
Thursday 3rd October 2013
The EPC9017 development board features Enhancement Mode Gallium Nitride (eGaN) FETs in parallel operation using optimum layout techniques to increase current capability and efficiency
Thursday 3rd October 2013
The firm's latest gallium nitride based optical and base station modules enhance RF amplifiers
Wednesday 2nd October 2013
Working with Rice University, a new funded program will leverage Daylight Solutions’ innovative imaging technology, and apply it to new methods for detecting cancer
Wednesday 2nd October 2013
The firm's X-Band Core Chip combines a CMOS logic driver with a gallium arsenide transmit/receive MMIC within a single QFN package
Wednesday 2nd October 2013
The firm has developed III-nitride LED technology to provide consumers with practical solutions that are accessible, flexible and intuitive
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Wednesday 2nd October 2013
The roadmap to even higher efficiencies has also been revealed with an R&D demonstration module exhibiting 37.1 percent efficiency
Wednesday 2nd October 2013
The joint development of a PVB film for photovoltaic module encapsulation with AIST has led to superior long-lasting durability and a frameless, thinner design
Wednesday 2nd October 2013
A 1 µm diameter micropillar composed of a GaAs layer sandwiched between two 'Bragg stacks' made from alternating layers of GaAs and AlAs emits a single photon exactly at a desired moment in time
Wednesday 2nd October 2013
The firm's bulb based on III-nitride chip technology has receives ENERGY STAR qualification and is now even more affordable thanks to utility rebates
Wednesday 2nd October 2013
The firm's silicon carbide (SiC) based enhanced SC³ technology platform drives performance up and system cost down
Wednesday 2nd October 2013
The market research firm says 2012 gallium arsenide device revenues hit $5.3 billion with additional growth anticipated in the immediate future. On the down side, a weak demand for MBE, and particularly MOCVD grown GaAs epitaxial substrates will adversely affect the device market in the longer term

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