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Thursday 1st August 2013
One of the complaints alleges the company was experiencing known, but undisclosed, pricing pressures for its products which could result adversely on SemiLEDs' future revenues and operating income
Thursday 1st August 2013
None - it's an LED bulb
Wednesday 31st July 2013
The company believes its latest III-nitride LEDs offer world class performance for solid state lighting
Wednesday 31st July 2013
The III-nitride LEDs are due to begin volume production in the final quarter of 2013
Wednesday 31st July 2013
The renovated Arizona based supermarket can now showcase its merchandise with better light, improved efficiency and continued savings
Wednesday 31st July 2013
A new state-of-the-art facility will expand operations for next-generation ALD equipment development and enable leading-edge scientific research
Info
Wednesday 31st July 2013
AGL has engaged First Solar to construct a 102MW [AC] solar plant at Nyngan and a 53MW solar project at Broken Hill
Tuesday 30th July 2013
The joint venture will use Veeco's MOCVD reactor to increase its indium gallium nitride (InGaN) LED production
Tuesday 30th July 2013
The largest LED manufacturer in China will use the reactor to grsow LEDs for applications including backlighting and general illumination
Tuesday 30th July 2013
With few MOCVD deals available, Veeco continues to experience significant competitive pricing pressure which is having an adverse impact on the company’s margins and breakeven level
Tuesday 30th July 2013
Using picosecond laser pulses diminishes thermal degradation to get a more accurate measurement of a material’s optical gain; this is vital for laser development
Tuesday 30th July 2013
The firm's GaAs (gallium arsenide) based high efficiency and lightweight solar modules are claimed to provide unmatched power to weight ratio
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Tuesday 30th July 2013
The two sets of gallium nitride-on-silicon LEDs are anticipated to commence mass production in August 2013
Tuesday 30th July 2013
The hollow cathode plasma source reduces the oxygen contamination in ALD systems and increases the quality of thin III-nitride films during growth
Monday 29th July 2013
By varying the compositional ratio of indium to gallium in InGaN, the band gap of the material can be tuned, allowing for device optimisation in the study of biological interactions
Monday 29th July 2013
The fully automates system speeds up surface analysis by up to ten times when compared to using a manual method
Monday 29th July 2013
The newly installed inspection system will be used in the characterisation of Kyma’s growing III-nitride semiconductor materials product line
Monday 29th July 2013
The GaInAsP (gallium indium arsenide phosphide) device comes in a number of fixed fibre length options up to 25 km. They are ideal for extending traditional hybrid fibre coaxial CATV systems
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Friday 26th July 2013
On a positive note, the company's quarterly results were mainly an improvement over the same quarter last year
Friday 26th July 2013
The capabilities of the Vero series arrays lead to shorter product development times, lower inventory requirements, reduced costs and more light with less energy
Friday 26th July 2013
GSE is one of just a few producers able to manufacture flexible CIGS (copper indium gallium diselenide) solar cells on a commercial scale
Friday 26th July 2013
The company has shown robust financial results in revenues, profits and incomes
Friday 26th July 2013
The firm has also released the first in a series of indium phosphide (InP) chips planned for future generations of high speed oscilloscopes
Thursday 25th July 2013
The indium phosphide telecoms specialist has had a fruitful 3 months with three new customers deploying its DTN-X platform

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