Wednesday 23rd October 2013
Soraa, developer of GaN on GaN LED technology, announced today that it has been awarded several million dollars in funding by U.S. Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) to pursue two projects related to the development of bulk GaN substrates for power electronics. The company has been selected under the ARPA-E's SWITCHES program to conduct the first phase of a 4 year, $3.2 million project to develop a revolutionary, U.S.-based technology for large-area, low-cost, high-quality bulk GaN substrates and to validate their performance in state-of-the-art power switches. Soraa also has an ongoing $4.75 million award from ARPA-E to develop ammonothermal bulk gallium nitride substrates for LEDs, vertical power devices, and next-generation power electronics. Soraa is partnering with Avogy Inc., a San Jose start-up and a pioneer in the development of GaN power devices on native GaN substrates, to evaluate the new substrates for power electronics applications and develop new, high performance vertical GaN transistors.