SiC crystal growth webinar
CTO of GT Advanced Technologies to present at PowerAmerica Institute's monthly webinar
P.S. Raghavan, CTO of GT Advanced Technologies, will speak about his research into the cost and quality of SiC substrate production on Wednesday, January 8th 2020, from 12pm to 1pm EDT. This is part of the PowerAmerica Institute's monthly webinar series.
SiC wafers are approximately ten times more expensive than silicon wafers but bring huge benefits and cost savings through smaller chip size, reduced passive components, and higher conversion efficiency.
The SiC substrate itself contributes 50 percent of the cost of the whole device value chain. The high cost is due to fundamental issues with vapour phase growth, multiple polytypes, and spiral growth mechanisms all of which mean that SiC cannot (yet) be grown without defects.
GT Advanced Technologies has an aggressive roadmap for reducing the substrate cost by half in the next few years using its expertise in crystal growth.
The company’s thermal modelling experience combined with equipment design has resulted in unique production processes, says Raghavan, resulting in high quality boules with low crystalline defects and commercial run-to-run reproducibility.
In this webinar, Raghavan will discuss the different SiC crystal growth processes, substrate cost reduction and recent advancements in SiC technology.
Raghavan brings over 33 years of industrial and academic experience in crystal growth instrumentation, crystal growth of semiconducting (Silicon, Silicon carbide,III-V and II-VI) materials, Oxides (Al2 03, LiNbO3), NLO materials, scintillation detecting materials and advanced electronic and photonic devices.
His decades of experience in developing technology and capital equipment has resulted in the successful commercialisation of silicon, sapphire, SiC and GaN crystal growth furnaces for the solar, LED, and consumer and power electronics manufacturing industries.
To join the webinar, click here.
