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Tuesday 28th May 2013
The EpiCurve Triple TT in-situ monitoring system is being used to develop epiwafers for InGaN/GaN LEDs and GaN power electronic devices
Monday 27th May 2013
The aluminium gallium arsenide based PIN diode series delivers cost, time and space savings for high-power switching applications
Friday 24th May 2013
The GaN on GaN LED specialist has asked the EPA not to repeat mistakes made on compact fluorescent lamps (CFLs)
Friday 24th May 2013
The convertible senior notes will be due in 2018. Infinera expects to use the net proceeds of the offering for general corporate purposes, including working capital and potential strategic projects
Friday 24th May 2013
firm has launched a couple of indium gallium phosphide processes to address the VCO for point-to-point and 12V PA for small cell PA infrastructure markets
Friday 24th May 2013
Holders may require Infinera to repurchase their Notes at a purchase price equal to the principal amount thereof plus accrued and unpaid interest to, but excluding, the repurchase date
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Friday 24th May 2013
Scientists have used electron microscopy imaging techniques on indium gallium nitride (InGaN) LEDs to settle the controversy of indium clustering and raise new experimental possibilities
Thursday 23rd May 2013
The firm's four-junction technology innovation opens the path to competitiveness in the PV industry
Thursday 23rd May 2013
The firm has released significant new GaN products and foundry services
Thursday 23rd May 2013
The talks included GaN-on-silicon, HB-LED, SiC and III-V developments
Thursday 23rd May 2013
Dell'Oro says that indium phosphide (InP) PIC specialist Infinera accounts for 29 percent of all long-haul 100G ports sold since the long-haul 100G market emerged in 2010
Thursday 23rd May 2013
The firm's gallium arsenide (GaAs) based laser products have broken barriers in high volume photonic communications applications
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Thursday 23rd May 2013
The firm's patented ISOGAIN gallium arsenide (GaAs) based technology achieves a linearisation of -53 dBc ACLR without the need for modem assistance or digital predistortion
Wednesday 22nd May 2013
The low noise broadband gallium arsenide based amplifier is suited for small cell and macrocell transceivers and applications requiring high linearity and high RF output power
Wednesday 22nd May 2013
Designers using gallium nitride power transistors can now go to one place to find a concentration of articles, videos, and textbooks to accelerate their products to market
Wednesday 22nd May 2013
The III-V based detector supports systems for next generation networks using 400 Gbit/s or 1 Tbit/s coherent detection-based optical transmission
Wednesday 22nd May 2013
Solar panels populated with Emcore's most advanced ZTJ III-V triple-junction solar cells will power a satellite that will carry the GPIM payload
Wednesday 22nd May 2013
The OEM partnership enables an ongoing close cooperation for integration of advanced in-situ metrology in Evatec’s reactors
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Wednesday 22nd May 2013
New board member Bernhard Stapp brings more than a dozen years of executive experience in LED lighting technologies to Aledia
Wednesday 22nd May 2013
The silicon carbide (SiC) based LEDs are suited to architectural, vehicle and display lighting and come in a range of colours
Tuesday 21st May 2013
Using Xilinx radio SmartCORE IP and Sumitomo Electric's gallium nitride (GaN) power amplifier transistors helps customers achieve greater than 50 percent power efficiency
Tuesday 21st May 2013
The firm has extended its product line in gallium nitride (GaN) based UV-LEDs
Monday 20th May 2013
Bridgelux will also continue to develop and market its GaN-on-Sapphire LED products as a fabless solid state lighting company
Monday 20th May 2013
The firm's expansion targets high-speed indium phosphide Core network applications across Russia and Eastern Europe

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