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Tuesday 19th March 2013
The new purifiers address the need for luminosity and cost control for III-nitride LEDs
Tuesday 19th March 2013
The firm has donated its cadmium telluride modules as part of the biennial 2013 Solar Decathlon Competition. This contest challenges students to use a holistic approach to design and engineer houses with net-zero energy consumption
Tuesday 19th March 2013
The company expects to phase out manufacturing in its Newton Aycliffe, UK-based GaAs pHEMT facility and transition most GaAs manufacturing to its GaAs HBT manufacturing facility in North Carolina
Monday 18th March 2013
The EML-TOSA device will help to downsize facilities and expand high-speed 40Gbps optical transmission networks
Monday 18th March 2013
The firm's new micro-ITLA is designed to offer improved performance for next generation coherent networks for 100 Gbps and beyond
Monday 18th March 2013
The etch solution for GaN, AlGaInP and PSS will offer HBLED production manufacturers high throughput coupled with excellent CoO
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Monday 18th March 2013
With 160 lumens-per-watt efficacy the module is suited for use in LED tubes, LED ambient lighting, downlighting and retrofit lamps. It provides a 30 percent increase in efficacy compared to Samsung's previous offering
Friday 15th March 2013
Platform enables cost-effective R&D of silicon photonic ICs for high-performance optical transceivers
Friday 15th March 2013
New Devices Could Deliver Significant Cost Savings to Power-Conversion Systems
Friday 15th March 2013
VICR, which incorporates InP (indium phosphide), is designed to improve signal-to-noise ratio and increase coincident channel count in 100G coherent systems
Friday 15th March 2013
The development board features a dedicated gallium nitride driver to facilitate the rapid design of high frequency switching power conversion systems using the EPC2016 eGaN FET
Friday 15th March 2013
The firm believes this is a major milestone for GaN power electronics as JEDEC qualification of gallium nitride-on-silicon. It will enable mass adoption price points for devices providing dramatically improved power efficiency
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Thursday 14th March 2013
The joint effort will enhance manufacturing and market analysis, key requirements for sustainable deployment of solar PV energy
Thursday 14th March 2013
Foundry Global Communication Semiconductors will provide the Canadian based firm with a complete range of indium phosphide wafer processing services. OneChip will also use IQE's epitaxial growth services to produce its InP PICs for the data centre interconnect and passive optical network markets
Wednesday 13th March 2013
The firm's fully integrated indium phosphide devices prevent the complicated steps required by CMOS silicon and VCSEL processess
Tuesday 12th March 2013
The AIX G5+ system will be used to grow gallium nitride on silicon for power supplies, PV inverters/power conditioners, motor drives, and electric vehicles
Tuesday 12th March 2013
Single chip ultra-violet LEDs combine high efficiencies with high output powers
Tuesday 12th March 2013
The tool will be used for research and development of various antimonide and arsenide-based III-V optoelectronic devices
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Tuesday 12th March 2013
The firm has developed an indium phosphide device for 100G coherent CFP2. The module enables a new generation of pluggable devices for metro and long-haul markets
Monday 11th March 2013
The MBE tool will be used for the preparation of silicon and germanium-based thin nanostructured layers
Monday 11th March 2013
An indium phosphide nanowire solar cell can produce an effect per active surface unit several times greater than today’s silicon cells
Monday 11th March 2013
The grant was undertaken under NASDAQ Marketplace Rule 5635
Monday 11th March 2013
Thanks to UV curing, UV LEDs should become a $270 million business by 2017, and could hit $300 million if new applications boom
Monday 11th March 2013
The gallium nitride amplifiers deliver performance and versatility for commercial and defence systems

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