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Wednesday 27th March 2013
The firm's latest detectors which use indium gallium arsenide, offer benefits over silicon based detectors which can suffer from saturation and bloom
Wednesday 27th March 2013
The U.S. Export-Import Bank has provided project financing to support MiaSolé California exports
Wednesday 27th March 2013
Costs or efficiency - can there be a middle ground
Wednesday 27th March 2013
The global supplier of wafer products and services to the semiconductor industry, has been honoured
Tuesday 26th March 2013
The silicon carbide modules will be incorporated in type 1000 railcars of the Tokyo Metro Ginza Line
Tuesday 26th March 2013
Cylindrical III-V nanowire structures are predicted to have great potential in the development of solar cells, quantum computers and other electronic products
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Tuesday 26th March 2013
With its extended family of integrated III-nitride LED devices, the firm claims its CXA LEDs deliver the industry’s highest efficacy lighting-class arrays
Monday 25th March 2013
MIT researchers have improved the efficiency of a quantum-dot photovoltaic system by adding a forest of nanowires
Friday 22nd March 2013
The company's gallium nitride transistors contribute to saving energy and are more compact than other similar devices. They are also suited to a variety of power switching systems for industrial and consumer applications
Friday 22nd March 2013
The companies aim to focus on Avago’s next-generation products using TowerJazz’s SiGe BiCMOS technology platform
Friday 22nd March 2013
The copper indium gallium diselenide modules are targeted at the defence and commercial industry
Friday 22nd March 2013
The group says it has been transformed by three strategic transactions, making the firm well positioned to exploit its position in growing markets. These include co-operations with Solar Junction, RFMD and Kopin
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Friday 22nd March 2013
CThe company's UVC LEDs help to realise ever more increasing range of customer applications including scientific instrumentation and water disinfection
Friday 22nd March 2013
The solar energy project in Shilin Town in China's south western province Yunnan is currently the largest CIGS module solar park feeding power into the Chinese grid
Thursday 21st March 2013
The supplier of crystalline aluminium and gallium nitride materials found that there is no noticeable degradation in the on resistance of its KO-Switch after 1 million device operations
Thursday 21st March 2013
A NIST investigation has reported that almost 90 percent of green and about 44 percent of red pointers were out of compliance with federal safety regulations
Thursday 21st March 2013
The indium phosphide based telecom provider is now offering a hardware acceleration chip that enables recovery from multiple-failures in less than 50 milliseconds
Wednesday 20th March 2013
Equipped for wafer bow control, Laytec's latest EpiTT system incorporates a blue laser and triple wavelength reflectance for the precise monitoring of AlN interlayers, AlGaN buffer layers and multiple quantum wells
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Wednesday 20th March 2013
Gallium arsenide device revenues have grown Y-o-Y in 2012 and although Skyworks and WIN Semiconductors are at the forefront, the silicon threat looms. This market has seen recent developments such as CMOS multi-mode, multi-band PAs and envelope tracking
Wednesday 20th March 2013
The manufacturer of III-V multi-junction solar cells used a Veeco MBE system to achieve critical milestones in developing a production-ready commercial cell
Wednesday 20th March 2013
Japanese firm Rohm has reduced power loss in its new silicon carbide device, making it ideal for 1200V/180A inverters
Tuesday 19th March 2013
The new purifiers address the need for luminosity and cost control for III-nitride LEDs
Tuesday 19th March 2013
The firm has donated its cadmium telluride modules as part of the biennial 2013 Solar Decathlon Competition. This contest challenges students to use a holistic approach to design and engineer houses with net-zero energy consumption
Tuesday 19th March 2013
The company expects to phase out manufacturing in its Newton Aycliffe, UK-based GaAs pHEMT facility and transition most GaAs manufacturing to its GaAs HBT manufacturing facility in North Carolina

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