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Thursday 6th June 2013
The firm's gallium nitride device is targeted towards the military and commercial high-power amplifier markets
Thursday 6th June 2013
The gallium nitride device supports radar architectures requiring ruggedness and reliability
Thursday 6th June 2013
The 8.0 mW/[email protected] mA version can match or exceed 5mm IR diodes. This allows extended battery lifetime of handheld devices, or increased panel sizes
Thursday 6th June 2013
Addition of both ceramic and plastic packaged 48V power transistors to its industry-standard packaged devices have extended capabilities in the defence and high volume commercial markets
Thursday 6th June 2013
Plasma-assisted MBE growth of InGaN directly on to silicon helps the development of tandem solar cells and optoelectronic devices operating at telecom wavelengths
Thursday 6th June 2013
The firm's cadmium telluride (CdTe) modules will be deployed in the 50MW plant. The project will create 300 jobs during the construction period
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Thursday 6th June 2013
Yole Développement analysis have charted the obstacles facing adoption of durable sapphire screen covers, showing that immediate use in a new iPhone would be too great a strain on the supply chain
Thursday 6th June 2013
The company’s latest silicon-germanium chip-making process enables data to flow through network backbones in applications such as Wi-Fi, LTE cellular, wireless backhaul and high speed optical communications
Wednesday 5th June 2013
The gallium nitride module are optimised for high power, gain and efficiency to support extended C-band applications
Wednesday 5th June 2013
The gallium nitride 200W power amplifier offer high power, gain and efficiency to enhance weather RADAR performance
Wednesday 5th June 2013
The aim of a joint project is to enable highly mismatched combinations such as GaAs-on-silicon, GaAs-on-InP, InP-on-germanium and GaAs-on-gallium antimonide
Wednesday 5th June 2013
Workshop attendees came from disciplines as diverse as LEDs, power, photonics, nanotechnology and MEMS participated in the full day event
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Wednesday 5th June 2013
The firm's new breakthrough technology delivers contractors quick Retrofit to LED lighting
Wednesday 5th June 2013
The RF power pioneer's new A&D-focused unit will take a multi-technology approach to leverage the advantages of its gallium arsenide, gallium nitride and LDMOS product lines
Wednesday 5th June 2013
Substrate thinning, device encapsulation and the introduction of gold interconnects takes single-chip ultraviolet LED performance to a new level
Wednesday 5th June 2013
Researchers have inexpensively and precisely applied cadmium selenide quantum dots onto OLEDs using inkjet printing to produce QD-LEDs
Wednesday 5th June 2013
SETi is planning to commercialise its aluminium gallium nitride LEDs for use in refrigerators to delay the spreading of mould
Wednesday 5th June 2013
Qualcomm has developed a CMOS power amplifier (PA) which is intended to knockoff whitebox mobile phone vendors
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Wednesday 5th June 2013
The firm maintains its Airfast RF gallium nitride power solutions deliver exceptional performance and industry-leading ruggedness
Tuesday 4th June 2013
The company says gallium nitride HEMT prices have greatly improved and are now a viable alternative to silicon LDMOS transistors for cellular telecom amplifiers
Tuesday 4th June 2013
The silicon germanium device is designed for mobile communications and radar imaging applications. The solution is claimed to seamlessly bring together 4 integrated chips and 64 antennas in a single package
Tuesday 4th June 2013
The Molecular Beam Epitaxy (MBE) system used in GaAs wafer production was the most damaged and required a virtual rebuild although it has now been refitted
Tuesday 4th June 2013
The gallium nitride device integrates multiple chips within a single unit to enable more compact radars and wireless communications equipment
Tuesday 4th June 2013
The company has expanded its gallium nitride on silicon carbide portfolio of devices for the L-band avionics market

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