Panasonic to show new GaN/SiC Devices at APEC 2019
Exhibits include 600V X-GaN power devices, SiC-DioMOS, and a GaN bidirectional switch
Panasonic Corporation will show its GaN/SiC power devices and related products at the Applied Power Electronics Conference and Exposition 2019, APEC 2019, which will be held in Anaheim, California from March 17 to 21, 2019. Exhibits include 600V X-GaN power devices; SiC-DioMOS devices and SiC modules; and a new GaN bidirectional switch.
By employing a proprietary structure, Panasonic’s 600V GaN power device, X-GaN, achieves normally-off and current collapse free characteristics, thereby enabling a size reduction and improving the efficiency of power conversion systems. Alongside these devices, Panasonic will also show industrial subsystems that can take full advantage of the X-GaN’s high performance, as well as application demos and an evaluation kit for checking the X-GaN performance.
Panasonic's SiC-DioMOS devices and SiC modules are built around its proprietary DioMOS (Diode-integrated MOSFET) structure. This approach enables a size reduction of SiC modules by adding the free-wheel diode functionality (necessary for power supplies and inverters) to transistors.
Also on show will be a new GaN switch capable of switching bidirectional and single directional current conduction. It has high voltage isolation with a single element. Because the bidirectional switch enables the reduction of conduction losses and the number of elements for this switching system, it contributes to the downsizing and higher conversion efficiency of power converter circuits. Panasonic will show small DBM (Drive-by-Microwave) isolated gate drivers that can drive the switch.