Loading...
News Article

GaAs: not as stable as thought?

News

Cardiff team see small pockets of metastability in GaAs atomic structure during MBE growth

Scientists from Cardiff University have spotted previously unseen 'instabilities' in GaAs. By using a low energy electron microscope combined with an MBE machine, they were able to observe dynamic changes on the atomic structure of the material during fabrication.

Their findings, published in Physical Review Letters, identified small pockets of instability that appeared and then disappeared.

The team at Cardiff University’s School of Physics and Astronomy and the Institute for Compound Semiconductors say this is the first time that this phenomenon, dubbed 'metastability', has been observed on GaAs surfaces.

Co-author of study Juan Pereiro Viterbo, from Cardiff University’s School of Physics and Astronomy, said: “At the moment we do not know whether this phenomenon is affecting the growth of semiconductor device structures – this is what we need to study next.

“If this phenomenon were to occur during the growth of semiconductor devices then this could have profound consequences.

“Ultimately these findings are helping us to better understand what is happening at the molecular scale, which will enable us to develop new materials and structures, reduce defects in existing compound semiconductor devices and therefore develop better electronics for our communication systems, computers, phones, cars and more.”

“Even though GaAs have been well studied, the use of low energy electron microscopy in the growing process allows us to observe dynamic events that have never been seen before,” concluded Viterbo.

'Surface Phase Metastability during Langmuir Evaporation' by K. Hannikainen et al; Phys. Rev. Lett. 123, 186102 – Published 1 November 2019

SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: