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Tuesday 27th November 2012
Combining aluminium gallium arsenide (AlGaAs) with a silicon device reaps the benefits of both technologies
Monday 26th November 2012
The firm says its new process enables more robust, high-efficiency gallium nitride (GaN) RF devices
Monday 26th November 2012
The agreement is to generate cash and strengthen the firm's existing relationship with II-VI and Photop Technologies
Monday 26th November 2012
The supplier of productivity-enhancing instrumentation and controls is branching out into NIR spectroscopy
Monday 26th November 2012
The seminar, describing compound semiconductor characterisation, was the largest one yet and attracted attendees from both academia and industry
Friday 23rd November 2012
The firm aims to expand its CIGSSe thin film module manufacturing in California and Mississippi
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Friday 23rd November 2012
The firm's indium phosphide (InP) based DTN-X platform has been awarded for its strength in bandwidth demands driven by video, high speed data and cloud-based services
Thursday 22nd November 2012
CS International are pleased to announce Vijit Sabnis, Vice President Technology at Solar Junction has been confirmed as a guest speaker for the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013. His presentation will be on PV Chip Development.
Thursday 22nd November 2012
The firm's nitride MJT series enables lighting manufacturers to deliver fixture level performance up to 100 lumens per watt. Also, the MJT series is designed on widely used 5630 and 3528 packages and improves compatibility with conventional dimmers
Wednesday 21st November 2012
The firm's indium phosphide (InP) based DTN platform will be used to bring together Europe's major business areas
Wednesday 21st November 2012
The RF device manufacturer has made leadership changes to enhance focus and drive its products forward
Wednesday 21st November 2012
The patent, regarding a green method of manufacturing II-VI quantum dots, will provide precise control of both QD shape and dimension during synthesis
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Wednesday 21st November 2012
The III-V solar cells will be used in the 200 kilowatt system at Edwards Air Force Base in 2013
Tuesday 20th November 2012
The III-arsenide based laser is suited to soldering, heat treatment and thin metal welding as well as, scientific research applications like fibre laser pumping
Tuesday 20th November 2012
The 3 x 2-inch CCS tool will be used to grow nitride R&D materials for light emitting sources, solar cells and sensors
Tuesday 20th November 2012
At a quantum yield greater than 80 percent, the II-VI dots are bright enough to be utilised as novel probes into not fully understood biological systems
Tuesday 20th November 2012
Using a novel molten droplet method to make lava dots out of zinc sulphide, cadmium sulphide and zinc selenide, hollow particles can exceed some performance metrics of quantum dots in a solar-cell test device
Tuesday 20th November 2012
The CIGS based EnerPlex Kickr IV allows consumers to transform the way they charge and use electronics in their everyday lives
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Tuesday 20th November 2012
It is not yet known but Glancy Binkow & Goldberg LLP are on the case
Monday 19th November 2012
The rugged fault-tolerant design is optimised for large research-quality magnets
Monday 19th November 2012
A new technique could potentially allow the fabrication of entire integrated circuits from graphene without the need for interfaces that introduce resistance
Monday 19th November 2012
Fraunhofer ISE has explored the limits of a new technology with gallium nitride power transistors
Monday 19th November 2012
The systems which are the subject of these transactions were delivered, accepted and paid for. The review focuses on determining whether revenue for these reactors was recognised in the appropriate accounting periods
Friday 16th November 2012
The producer of specialty metals such as indium, gallium and germanium used in MOCVD growth, has also acquired 100 percent of MCP Metals (Shenzhen) Co., Ltd gallium refining facility

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