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Friday 16th November 2012
Having completed assembly of its CIGSolar TFPV solar cell system, the company is beginning to ready the system for customer demonstrations
Friday 16th November 2012
The two gallium nitride on silicon carbide modules are suited to weather radar and surface ship radar. S-band radar is also used in some communications satellites, especially those used to communicate with the space shuttle and the international space station
Thursday 15th November 2012
The firm's silicon carbide Bipolar Junction Transistors are the first in its SiC product portfolio. They are claimed to offer the lowest total power losses at high operation temperatures
Thursday 15th November 2012
The firm's latest module utilises gallium arsenide HBT and pHEMT technologies for Smart Metering/Smart Energy applications
Thursday 15th November 2012
The wafer bonding tool should advance silicon carbide, gallium nitride and/or other CS technologies at Texas State University. The multifunctional tool can also be used for silicon based power devices
Thursday 15th November 2012
The Hyperion ion implanter technology will enable GT to produce thin silicon carbide, germanium, sapphire, silicon and other crystalline material substrates. GT believes this should enable breakthroughs in performance and cost for solar and power semiconductor applications
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Thursday 15th November 2012
The firm's latest silicon carbide devices are optimised for high power, high voltage industrial applications
Wednesday 14th November 2012
The firm's new modules are produced using the firm's gallium arsenide MESFET technology. They are claimed to offer excellent ruggedness to provide industry-leading reliability
Wednesday 14th November 2012
By 2020, it is forecast that LED lamps will make up 66 percent of the LED chip market, which will be shrinking
Wednesday 14th November 2012
The companys' combined reference design incorporates Avago modules utilising the firm’s gallium arsenide (GaAs) based 850nm VCSEL and PIN array technologies
Wednesday 14th November 2012
This new app for iPhones, iPads and iPods allows you to keep bang-up-to-date with the CS industry while on the move
Wednesday 14th November 2012
Light bleeding and overshadowing often encountered in nitride LEDs, can be resolved by using the new domed architecture
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Wednesday 14th November 2012
The firm's gallium nitride based "Vivid LED" and "Outdoor LED" MR16 lamps have been independently praised for their low energy consumption, consistency and efficiency
Tuesday 13th November 2012
The Taiwanese company is expanding its MOCVD manufacturing capacity to grow gallium arsenide based lasers
Tuesday 13th November 2012
The firm's five new 3-in-1 full colour nitride LEDs and lamps for indoor, semi-outdoor and outdoor applications, combine performance with efficiency
Tuesday 13th November 2012
The gallium nitride transistors are optimised for broadband applications requiring linear back-off operation or reduced spurious performance
Tuesday 13th November 2012
The strained quantum well indium phosphide design is ideally suited for moisture detection
Tuesday 13th November 2012
Using multiple tiers of indirect bandgap semiconductors, such as silicon and germanium, it is claimed that efficiencies of 40 percent can be reached
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Monday 12th November 2012
IQE, supplier of advanced semiconductor wafer products and services to the semiconductor industry, has announced the winning of the title of Company of the Year at the Western Mail / Institute of Welsh Affairs Business Awards staged at Cardiff City Hall, UK on 9th November.
Monday 12th November 2012
The Taiwanese company will present its most updated series of LED packages for infrared and sensor, general lighting, TFT LCD backlight, signage and intelligent digital display applications
Monday 12th November 2012
The global supplier of advanced semiconductor wafer products and services to the semiconductor industry, won the over £10 million turnover award
Monday 12th November 2012
The firm's new "Instant Bandwidth" software enables Infinera's indium phosphide on DTN-X platform
Monday 12th November 2012
The firm's ELITE system comprises a laser marker, full IR lens options, double-sided probing and high voltage power analysis capability for silicon carbide device inspection
Monday 12th November 2012
The company says it is introducing industry’s first fully qualified, production-ready all-silicon carbide power module

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