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Thursday 6th December 2012
The deal with Solar Junction, which produces 44 percent efficiency III-V wafers, should position IQE to become one of the key epiwafer suppliers to the CPV market
Thursday 6th December 2012
The III-V gallium arsenide (GaAs) based monolithic platform could change the roadmap for smartphones, tablet and wearable computers
Thursday 6th December 2012
Sagem will transfer to Sofradir its indium antimonide (InSb) and indium gallium arsenide (InGaAs) technology
Wednesday 5th December 2012
Johnson Matthey have confirmed they will be Gold sponsors at the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013.
Wednesday 5th December 2012
At 930mW the 850nm chip, from an operating current of 1A, has a light output (under lab conditions) 25 percent higher than that of many of the chips currently available
Wednesday 5th December 2012
Indium gallium arsenide is one of the several promising semiconductors being studied to replace silicon
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Wednesday 5th December 2012
The newly formed firm will use the reactors to manufacture III-nitride HB-LED wafers
Wednesday 5th December 2012
These devices, many based on indium phosphide (InP) and gallium arsenide (GaAs) technology, have changed the dynamics of the optical network industry
Tuesday 4th December 2012
First Solar will work with Zhenfa to deploy its cadmium telluride modules to power up the Xinjiang province
Tuesday 4th December 2012
The firm has secured a contract to produce indium phosphide wafers for lasers in telecommunications
Tuesday 4th December 2012
The ICOS WI-2280 system is designed to provide manufacturers with greater flexibility, reduced cost of ownership and improved efficiency
Tuesday 4th December 2012
The firm's process for lift-off compound semiconductor applications improves uniformity. It is also claimed to deliver up to 40 percent reduction in material consumption
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Monday 3rd December 2012
After the spinoff, Siemens AG will hold a 17 percent stake in III-nitride manufacturer Osram, and the Siemens Pension Trust will hold a 2.5 percent stake
Monday 3rd December 2012
The indium phosphide (InP) platform based on PIC technology demo spanned Manhattan to Upton in New York
Monday 3rd December 2012
The company will use part of the cash to commercialise its RPCVD technology for LED applications and further develop solar cell applications
Monday 3rd December 2012
As well as increasing brightness, the firm maintains its latest technology lowers LED lighting costs considerably
Friday 30th November 2012
The compact, economical source has a response from 400-2500nm and can be used to analyse compound semiconductors in a number of applications
Friday 30th November 2012
A multiport SiC device accommodates all the required voltages from a single, compact unit, allowing each system to be optimised for maximum efficiency
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Friday 30th November 2012
All Ring has agreed to pay ESI about USD $ 16.3 million as a settlement and to discontinue selling the infringing products
Friday 30th November 2012
Yes, according to Samsung. Rather than a gallium arsenide power amplifier, the mass produced 3G Samsung Galaxy Appeal is one of the first phones incorporating a silicon CMOS power amplifier
Friday 30th November 2012
The MOCVD and MBE equipment supplier intends to submit a plan by January 22nd, 2013 to regain compliance with NASDAQ’s listing rules
Thursday 29th November 2012
CS International are pleased to announce Bryan Bothwell, Strategy and Business Development Manager for TriQuint Semiconductor has been confirmed as a guest speaker for the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013. His presentation will be on Maximizing Gallium Nitride Product Solutions and Foundry Services for Advanced RF Design Success.
Thursday 29th November 2012
Translucent have confirmed they will be Gold sponsors at the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4h & 5th March 2013.
Wednesday 28th November 2012
The indium phosphide (InP) PIC provider and its Japanese partner says that this is a milestone for delivery of high capacity optical transmission over DSF fibre

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