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GTAT Opens New SIC Manufacturing Facility

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Highly scalable US plant will meet growing demand for high quality SiC material

GTAT Corporation (GTAT) opened its new state-of-the-art SiC manufacturing plant with a ribbon-cutting ceremony that included state and local officials who were on hand to commemorate the event.

The facility, located in Hudson, New Hampshire, US also includes the company's new corporate headquarters as well as its advanced research and development centre.

“The opening of our new SiC production facility represents a significant milestone for the company's transition from an equipment provider to a materials company,” said Greg Knight, GTAT's president and chief executive officer.

“This beautiful, new production facility positions us as one of the only companies in the world with the know-how and capacity to offer high quality SiC material for a growing number of power electronics applications in high growth markets. Our expertise in crystal growth equipment, managing supply chains and deep domain knowledge in a number of advanced materials has given us a competitive advantage in meeting the growing demand for wide-band-gap semiconductors.”

The company is continuing to commercialise other technologies such as its new tube filaments used to lower the cost of producing polysilicon and its continuous Cz feeder, which lowers the cost of producing monocrystalline silicon wafers for the solar industry.


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