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Friday 2nd December 2011
The award is to develop gallium nitride class E power amplifiers that incorporate supply modulation and control enabled by novel power switch technology.
Friday 2nd December 2011
The firm's gallium nitride devices received dual honours in the categories of Energy-Savings Technology and RF/HFC Technology.
Friday 2nd December 2011
The firm impressed judges with its continuously changing product range which have adapted to the international market over the past three years.
Friday 2nd December 2011
Manz believes CIGS thin-film technology is the last step toward solar power, being able to compete with other sources of solar energy without subsidies.
Friday 2nd December 2011
Low insertion loss and small package size of the gallium arsenide MMIC switch enable combo wireless designs at frequencies from 0.5 to 6.0 GHz.
Friday 2nd December 2011
Funding by Khosla Ventures and NEA will help to develop and commercialise blue and green lasers grown on non-polar and semi-polar gallium nitride substrates.
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Thursday 1st December 2011
The JV LED manufacturing company involving Changzhi High Tech Industry Investment, China, and Arima Optoelectronics from Taiwan aims to boost HB LED capacity
Thursday 1st December 2011
The innovator of high reliability analogue and mixed signal semiconductors will acquire the outstanding shares of AnalogicTech for $5.80 per share in cash.
Thursday 1st December 2011
The firm's III-V compound semiconductor solar cells have a beginning-of-life conversion efficiency nearing 30% and the option for a patented, onboard monolithic bypass diode
Thursday 1st December 2011
The presentation will describe the potential for arsenide/antimonide based materials for integration into future ultra low voltage electronic devices.
Thursday 1st December 2011
The new 2.5 to 2.7 GHz WiMAX/LTE PA delivers higher linear output power to provide greater range and throughput.
Thursday 1st December 2011
The next-generation LED module family features TrueWhite technology and are claimed to provide an industry-leading Colour Rendering Index (CRI) greater than 90.
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Thursday 1st December 2011
With almost 20 years of financial experience, Brady will serve as liaison between the cadmium telluride solar cell manufacturer and its investors.
Thursday 1st December 2011
The firm will provide systems which use III-V-based triple-junction solar cells incorporating gallium indium phosphide, gallium indium arsenide and germanium, to Focusic.
Thursday 1st December 2011
The terms of the cross-license agreement will not be disclosed.
Thursday 1st December 2011
The award will fund a two-year program for the firm's flexible, III-V compound semiconductor multi-junction solar cells.
Wednesday 30th November 2011
Switching from a dry process to wet lowers capital and manufacturing costs, scalability, and better throughput for gallium nitride and indium gallium nitride LEDs.
Wednesday 30th November 2011
For the third time in a row, LayTec was awarded with Deloitte’s Technology Fast 50 Award for Germany and the Deloitte’s Technology Fast 500 EMEA Award.
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Wednesday 30th November 2011
The presentation will be webcast live at 1:30 p.m. ET on December 7.
Wednesday 30th November 2011
With more than 43% of power added efficiency, the devices have power outputs of 100W and 50W and feature 40V high-voltage operation.
Wednesday 30th November 2011
Gallium nitride nanowires grown by PML scientists may only be a few tenths of a micron in diameter, but they promise a very wide range of applications, from new LEDs and diode lasers to ultra-small resonators, chemical sensors, and highly sensitive atomic probe tips.
Wednesday 30th November 2011
Communiqué calls on leaders to promote green growth and a climate resilient economy.
Wednesday 30th November 2011
A webcast of the company's presentation will be available on the investor relations page of the company's website.
Wednesday 30th November 2011
Q-cells says this sets a world-record for the entire thin-film sector catching up with crystalline technology.

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