These amplifiers best operate in combination with the MGF4921AM, Mitsubishi Electric's low noise gallium arsenide (GaAs) high electron mobility transistor already available for the first stage of amplifying.
Researchers used magnets to tune supercooled gallium arsenide (GaAs) into a photon detector. This latest development is hoped to eventually be used in computer chips to produce faster and more powerful computers.
Ge P-channel transistors could potentially be combined with complementary III-V N-channel transistors to form a suitable CMOS architecture. This would provide higher mobility and could potentially lead to processors with higher performance and better energy efficiency.
Aixtron & Aachen University are hosting a two-day workshop in Aachen focused on the latest developments and results in the field of optoelectronics, such as LEDs, nanotechnology, photonics and solar technology.
The plant will be capable of producing over 100 lithography steppers annually for the advanced packaging and the HB-LED markets. Manufacturing should begin in late 2010 with the first tool shipments to customers scheduled for Q1 2011.
The Plasma Technology division, which provides process solutions for epitaxial growth of compound semiconductor materials, has appointed Nick Curtis to ensure that customers will gain an insight into its full range of systems in order to maximize their performance and process capabilities.