News Article

Translucent And Vilnius Link Up For Non Polar GaN

Epi-Twist substrates will be used by the Institute of Applied Research at Vilnius University for MOCVD growth

Translucent Inc, based in Palo Alto, US, has announced a joint project with Vilnius University developing non-polar GaN epitaxy on Translucent's cREO silicon templates.

Translucent's epi-Twist substrates will be used by the Institute of Applied Research at Vilnius University, Lithuania for MOCVD growth of non-polar GaN. The group received €119.9K research grant from Research Council of Lithuania.

The crystalline rare earth oxide (cREO) epitaxially grown on silicon is a proven template for the MOCVD growth of III-N materials. Available in both 150mm and 200mm diameters, these templates provide an entry point for new adopters of power GaN supporting both AlN first MOCVD but also enabling GaN first growth processes not currently available for MOCVD growth on silicon. 

Since the template is grown independently of the III-N its properties can be designed to support the upstream MOCVD process "“ for example the buried oxide can take a portion of the vertical breakdown or can be used to offset some of the mechanical stresses imparted traditional GaN-on-silicon. Focused on serving the power GaN market this technology also has applicability to both RF GaN and GaN LEDs on silicon

The goal of the project is to demonstrate MOCVD growth of non-polar GaN on Si(100). Initial research results in this field, previously conducted by Translucent, were presented at IWN-2014 in Wroclaw, Poland. 

The Vilnius project is currently funded through September 2017. 

AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.



Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
Live Event