Macom Introduces Broadband, Multistage GaN-on-Si PA
10W fully-matched, two-stage PA covers the 225 – 2600 MHz frequency range
Macom Technology has expanded its GaN-on-Si power amplifier portfolio with the introduction of its new MAMG-100227-010 broadband PA module designed for use in land mobile radio (LMR) systems, wireless public safety communications and military tactical communications and electronic countermeasures (ECM).
Combing the design efficiencies of a fully-matched (50 Ω), two-stage PA architecture with top-side and bottom-side mounting configurability, the MAMG-100227-010 is poised to enable unprecedented design flexibility for radios balancing stringent size, weight and power (SWaP) specifications.
The new MAMG-100227-010 leverages high-performance Macom GaN-on-Si to achieve an extremely wide frequency bandwidth of 225 – 2600 MHz, with 10W CW output power, 40 percent typical power added efficiency (PAE) over the band, 22 dB typical power gain, and up to 36V operation (28V typical). Provided in a compact 14x18 mm air-cavity laminate package with integrated gold-plated copper heatsink, the MAMG-100227-010 can eliminate the need for additional componentry and PCB space required for unmatched PA architectures, with top and bottom accessibility for improved mounting and heatsinking agility.
“The MAMG-100227-010 builds on Macom’s rich legacy of providing high-performance GaN-on-Si solutions with field-proven reliability,” said Mark Murphy, senior director of marketing, RF power and basestation, Macom. “For customers seeking exceptional design flexibility, the MAMG-100227-010 exemplifies the design and application expertise that Macom provides across a wide range of broadband frequencies and power levels.”
