Loading...
News Article

EpiGaN to present at two CS events this month

News

Markus Behet will present in Shanghai and Brussels on EpiGaN’s GaN on Si technology for 5G applications

EpiGaN will be discussing its latest GaN material solutions for RF power, power switching and sensor applications at two Compound Semiconductor events in March. These are the Power & Compound Semiconductor International Forum 2019 at the Semicon China show on March 21st and 22nd in Shanghai and at the the Compound Semiconductor International Conference in Brussels/Belgium on March 26th and 27th.

EpiGaN’s CMO, Markus Behet, will present at both events on the latest status of EpiGaN’s GaN on Si technology for 5G applications including up to 200mm GaN/Si and 150mm GaN/SiC epitaxial wafer solutions; in-situ SiN passivation in combination with (Al,Ga)N and (Al,In)N barriers; lowest RF losses and leakage for GaN-on-Si wafers; device access on EpiGaN technology through foundry partners.

The Power & Compound Semiconductor International Forum 2019 is one of the largest professional event about power and compound semiconductor industry in Asia. Organised in conjunction with SEMICON China, it focuses on topics including: Wide Band Gap Power Electronics, Optoelectronics, Compound Semiconductor in Communications, and Emerging Power Device Technology.

The 9th Compound International International conference will take place the week after in Brussels/Belgium and will focus on breakthrough in device technology, offer insights into current status and the evolution of compound semiconductor devices and technology and provide details of advances in tools, processes that will help drive up fab yields and throughputs.

SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: