Transphorm adds More GaN FETs to Gen III Line
New surface mount devices address interest in reliable high voltage GaN in many applications
Transphorm has announced its first Gen III PQFN88 transistors. The new 650V devices are available in two versions, the TP65H070LSG (source tab) and TP65H070LDG (drain tab),and offer an on-resistance of 72 milliohms.
Launched in June 2018, Transphorm’s Gen III devices came onto the market as high quality, high reliability [Q+R] GaN FETs. They pair a custom-designed low-voltage MOSFET with the GaN FET to offer: quiet switching, high performance at increased current levels with minimal external circuitry, increased noise immunity (threshold voltage at 4 V), and increased gate robustness (at +/- 20 V).
The Gen III drain and source PQFN88 packages include wider pins for increased board level reliability (BLR), which increases the reliability of multi-layer PCB designs. Offering the drain and source tab configurations also accommodates both high and low side switch locations. This provides increased radiated immunity as the large pad is soldered to the non-switching node. Further, adding PQFN88 devices to the existing list of Gen III TO-XXX FETs gives engineers an opportunity to explore GaN-driven surface mount applications using Transphorm’s latest technology.
“Our focus continues to be on increasing GaN FET reliability while delivering higher power density,” said Philip Zuk, VP of technical marketing worldwide and North America sales, Transphorm. “As market interest in high voltage GaN technology continues to grow, we also aim to arm our customers with device options that fit each potential application. To that end, the introduction of the 72 milliohm source and drain PQFN88 devices allows us to meet all three objectives as we fill out our current product family.”