Rohm announces fast switching 4-Pin SiC MOSFETs
Up to 35 percent lower switching loss over conventional packages reduces device power consumption
Rohm has announced six new trench gate structure SiC MOSFETs (650V/1200V), the SCT3xxx xR series, for server power supplies, UPS systems, solar power inverters, and EV charging stations requiring high efficiency.
The SCT3xxx xR series uses a 4-pin package (TO-247-4L) for high switching performance, making it possible to reduce switching loss by up to 35 percent over conventional 3-pin package types (TO-247N). This contributes to lower power consumption in a variety of applications.
In recent years, the growing needs for cloud services due to the proliferation of AI and IoT has increased the demand for data centres worldwide. But for servers used in data centres, one major challenge is how to reduce power consumption as capacity and performance increase.
At the same time, SiC devices are attracting attention due to their smaller loss over mainstream silicon devices in the power conversion circuits of servers. Furthermore, as the TO-247-4L package enables to reduce switching loss over conventional packages, it is expected to be adopted in high output applications such as servers, base stations, and solar power generation.
In 2015 Rohm became the first supplier to successfully mass-produce trench-type SiC MOSFETs. In addition to these newest 650V/1200V high efficiency SiC MOSFETs, the company says it is committed to developing innovative devices and propose solutions that contribute to lower power consumption in a variety of devices, including gate driver ICs optimised for SiC drive.
Rohm also offers a SiC MOSFET evaluation board, P02SCT3040KR-EVK-001, equipped with gate driver ICs (BM6101FV-C) along with multiple power supply ICs and discrete components optimised for SiC device drive.