Loading...
News Article

Navitas GaN in tiny adapter for Asus laptop

News

GaN technology enables adapter to use high-frequency, soft-switching techniques in both power factor correction and downstream DC-DC stages

Navitas Semiconductor has announced that its power technology enables the highest density power adapter for the world’s fastest laptop,the Asus ProArt StudioBook One.

An NVIDIA RTXTM Studio system, the ProArt One is the, first laptop to feature the NVIDIA Quadro RTXTM 6000 GPU and is based on NVIDIA’s ACE reference architecture.

The 300W AC-DC adapter design, developed in collaboration with NVIDIA, exploits the high-speed power-conversion technology of Navitas’ GaNFast power ICs to create a powerful, yet light-weight and small-size mobile charger.

“Creatives and other professionals demand the highest computing performance with extreme mobility,” said Gene Sheridan, Navitas CEO. “Navitas’ dedicated technologists worked alongside the NVIDIA engineering design team to address this challenge as part of the NVIDIA ACE reference design, delivering a 300W laptop adapter in half the size of traditional adapters.”

“The high-speed performance of the Navitas GaNFast power ICs is a perfect match for the high-speed NVIDIA Quadro RTX 6000 GPU in the ProArt StudioBook One,” said Gabriele Gorla, director of Engineering at NVIDIA. “The result is an extraordinary accomplishment: a laptop with 16.3 TFLOPs of compute performance powered by a mobile adapter that fits in the palm of your hand.”

The power adapter uses highly-integrated, speed-optimised, next-generation GaN semiconductor technology that replaces old, slow discrete silicon components, and enables the adapter to us high-frequency, soft-switching techniques in both power factor correction (PFC) and downstream DC-DC stages. High-frequency, high-efficiency switching shrinks the size, weight and cost of passive components and heatsinks. Navitas GaNFast power ICs enable a new generation of fast-charging mobile adapters for smartphones, tablets and laptops from 27W to 300W+.

SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: