Loading...
News Article

NRL expert to talk about SiC defects

News

Bob Stahlbush will discuss using ultraviolet photoluminescence (UVPL) imaging techniques to understand SiC device yield, performance and reliability

The potential of SiC power devices to deliver better performance than silicon power devices has become a commercial reality. Compared to silicon, SiC has a three times larger bandgap, a ten times higher breakdown field, and three times higher thermal conductivity.

A crucial factor behind the commercially viability of SiC power devices has been the reduction of extended defects within the active volume of SiC devices. Bob Stahlbush of the US Naval Research Laboratory (NRL) is an expert in this area. He will be speaking about his research on Wednesday 4th December 2019 through PowerAmerica institute's monthly webinar.

In the webinar 'Origins and Effects of BPDs (basal plane dislocations) and Other Extended Defects on SiC Power Devices' Stahlbush will look at defects and their effects on device yield, performance and reliability referencing the ultraviolet photoluminescence (UVPL) imaging technique he has developed in the NRL lab.

He will show UVPL images of extended defects including basal plane dislocations (BPDs), in-grown stacking faults, inclusions, low-angle grain boundaries, and trapezoidal defects. He will talk about the origin of these defects as well as their effect on device yield and reliability. BPDs are interesting because there are multiple mechanisms for creating them, and they have the strongest effect on device reliability.

Stahlbush received his BA in Physics from Clark University and his PhD in Physics from Cornell University. After a post-doctoral fellowship at NIST, he joined the Naval Research Laboratory. In 2000, he started studying extended defects in SiC and has concentrated on measurements that identify these defects and examine how adversely affect the yield, performance and reliability of SiC power devices.

Among his accomplishments is the development of the whole-wafer, non- destructive ultraviolet photoluminescence (UVPL) technique for imaging extended defects. In the last couple of years this technique has become an industry standard for screening these defects in SiC wafers before and during device fabrication. He has over 200 publications that have been cited over 3,000 times.

SPONSOR MESSAGE

Secure Your Hydrogen Supply

A study supply of high-purity hydrogen is critical to semiconductor fabrication. Supply chain interruptions are challenging manufacturers, leading to production slowdowns and stoppages. On-site hydrogen generation offers a scalable alternative for new and existing fabs, freeing the operator from dependence on delivered gas.

Plant managers understand the critical role that hydrogen plays in semiconductor fabrication. That important job includes crystal growth, carrier gas, wafer annealing, and in the emerging Extreme UV Lithography (EUV) that will enable new generations of devices. As the vast need for semiconductors grows across all sectors of world economies, so does the need for high-purity hydrogen.

Take control with Nel on-site hydrogen generation.

Read more
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
x
Adblocker Detected
Please consider unblocking adverts on this website