Teledyne e2v HiRel and GaN Systems Unveil 100V GaN HEMT
100V/90A GaN Power HEMT now shipping with bottom-side cooled packaging
Teledyne e2v HiRel is launching a new, ruggedised 100V/90A GaN power HEMT based on technology from GaN Systems.
“In addition to the currently released TDG650E60 650V GaN HEMT, the TDG100E90 compliments our portfolio with a lower voltage, higher current option providing GaN flexibility and choices to the HiRel power design community.”
The new GaN power HEMT, TDG100E90, is now available with a bottom-side cooled GaNPX package for all applications requiring extremely high reliability, in particular space and military. It joins the recently announced 650V, 60A TDG650E60, and is available to provide a lower step-down voltage in high reliability power circuitry.
For all product lines, Teledyne e2v HiRel performs the qualification and testing tailored to the highest reliability applications. This regimen includes sulphuric test, high altitude simulation, dynamic burn-in, step stress up to 175degC ambient, testing at 9V gate voltage, and full temperature testing.
This new addition to Teledyne’s GaN Power HEMT family boasts a small form factor and uses patented Island Technology from GaN Systems. This technology is a scalable, vertical charge dissipating system that gives the power transistor ultra-low thermal losses, high power density, no-charge storage, and very high switching speeds.
Compared to silicon MOSFETs, the GaN-based TDG100E90 HEMT significantly reduces losses and EMI, due to no reverse recovery characteristics. To reduce drain-source on resistance (RDS(on)) or increase the load current, the TDG100E90 can easily support parallel driving configuration. The use of high performance GaNPX packaging allows very high frequency switching, extremely low inductance, and excellent thermal characteristics, enabling customers to significantly reduce the size and weight of power electronics.
“Teledyne e2v HiRel is pleased to be working with GaN Systems on solutions for the most demanding requirements in key applications for avionics, radar, satcom, space, and more,” said Mont Taylor, VP of Business Development for Teledyne e2v HiRel. “In addition to the currently released TDG650E60 650V GaN HEMT, the TDG100E90 compliments our portfolio with a lower voltage, higher current option providing GaN flexibility and choices to the HiRel power design community.”
Qualified TDG100E90 devices with bottom-side cooling are now shipping and available for immediate purchase. Customers may review the datasheet here.
